TC74VCX2125FK Datasheet PDF - Toshiba Semiconductor

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TC74VCX2125FK
Toshiba Semiconductor

Part Number TC74VCX2125FK
Description Low Voltage Quad Bus Buffer
Page 10 Pages


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TC74VCX2125FT/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VCX2125FT,TC74VCX2125FK
Low Voltage Quad Bus Buffer with 3.6-V Tolerant Inputs and Outputs
The TC74VCX2125FT/FK is a high-performance CMOS quad
bus buffer. Designed for use in 1.8-V, 2.5-V or 3.3-V systems, it
achieves high-speed operation while maintaining the CMOS low
power dissipation.
It is also designed with overvoltage tolerant inputs and outputs
up to 3.6 V.
This device requires the 3-state control input OE to be set
high to place the output into the high-impedance state.
The 26--series resistor helps reducing output overshoot and
undershoot without external resistor.
All inputs are equipped with protection circuits against static
discharge.
TC74VCX2125FT
TC74VCX2125FK
Features
26--series resistos on outputs.
Low-voltage operation: VCC = 1.8 to 3.6 V
High-speed operation: tpd = 3.7 ns (max) (VCC = 3.0 to 3.6 V)
: tpd = 4.8 ns (max) (VCC = 2.3 to 2.7 V)
: tpd = 9.6 ns (max) (VCC = 1.8 V)
Output current: IOH/IOL = ±12 mA (min) (VCC = 3.0 V)
: IOH/IOL = ±8 mA (min) (VCC = 2.3 V)
Weight
TSSOP14-P-0044-0.65A
VSSOP14-P-0030-0.50
: IOH/IOL = ±4 mA (min) (VCC = 1.8 V)
Latch-up performance: 300 mA
ESD performance: Machine model ≥ ±200 V
Human body model ≥ ±2000 V
Package: TSSOP and VSSOP (US)
3.6-V tolerant function and power-down protection provided on all inputs and outputs
: 0.06 g (typ.)
: 0.02 g (typ.)
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1
2007-10-19



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Pin Assignment (top view)
1OE 1
1A 2
1Y 3
2OE 4
2A 5
2Y 6
GND 7
14 VCC
13 4OE
12 4A
11 4Y
10 3OE
9 3A
8 3Y
TC74VCX2125FT/FK
IEC Logic Symbol
1OE
1A
2OE
2A
3OE
3A
4OE
4A
1
2
4
5
10
9
13
12
EN
3 1Y
6 2Y
8 3Y
11 4Y
Truth Table
Inputs
OE
H
L
L
A
X
L
H
X: Don’t care
Z: High impedance
Outputs
Y
Z
L
H
Absolute Maximum Ratings (Note 1)
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
Power dissipation
DC VCC/ground current
Storage temperature
Symbol
VCC
VIN
VOUT
IIK
IOK
IOUT
PD
ICC/IGND
Tstg
Rating
0.5 to 4.6
0.5 to 4.6
0.5 to 4.6 (Note 2)
0.5 to VCC + 0.5
(Note 3)
50
±50 (Note 4)
±50
180
±100
65 to 150
Unit
V
V
V
mA
mA
mA
mW
mA
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
www.DataSheet4U.Pcolemase design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: OFF state
Note 3: High or low state. IOUT absolute maximum rating must be observed.
Note 4: VOUT < GND, VOUT > VCC
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Operating Ranges (Note 1)
TC74VCX2125FT/FK
Characteristics
Symbol
Rating
Unit
Power supply voltage
Input voltage
Output voltage
Output current
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
IOH/IOL
Topr
dt/dv
1.8 to 3.6
1.2 to 3.6 (Note 2)
0.3 to 3.6
0 to 3.6 (Note 3)
0 to VCC (Note 4)
±12 (Note 5)
±8 (Note 6)
±4 (Note 7)
40 to 85
0 to 10 (Note 8)
V
V
V
mA
°C
ns/V
Note 1: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 2: Data retention only
Note 3: OFF state
Note 4: High or low state
Note 5: VCC = 3.0 to 3.6 V
Note 6: VCC = 2.3 to 2.7 V
Note 7: VCC = 1.8 V
Note 8: VIN = 0.8 to 2.0 V, VCC = 3.0 V
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Electrical Characteristics
DC Characteristics (Ta = −40 to 85°C, 2.7 V < VCC =< 3.6 V)
Characteristics
Symbol
Test Condition
Input voltage
H-level
L-level
H-level
Output voltage
L-level
Input leakage current
3-state output OFF state current
Power-off leakage current
Quiescent supply current
Increase in ICC per input
VIH
VIL
IOH = −100 μA
VOH
VOL
IIN
IOZ
IOFF
ICC
ΔICC
VIN = VIH or VIL
IOH = −6 mA
IOH = −8 mA
IOH = −12 mA
IOL = 100 μA
VIN = VIH or VIL
IOL = 6 mA
IOL = 8 mA
IOL = 12 mA
VIN = 0 to 3.6 V
VIN = VIH or VIL
VOUT = 0 to 3.6 V
VIN, VOUT = 0 to 3.6 V
VIN = VCC or GND
VCC <= (VIN, VOUT) <= 3.6 V
VIH = VCC 0.6 V
DC Characteristics (Ta = −40 to 85°C, 2.3 V =< VCC =< 2.7 V)
Characteristics
Symbol
Test Condition
Input voltage
H-level
L-level
Output voltage
H-level
L-level
Input leakage current
3-state output OFF state current
www.DataPSohweeert-4oUff.lceoamkage current
Quiescent supply current
VIH
VIL
VOH
VOL
IIN
IOZ
IOFF
ICC
IOH = −100 μA
VIN = VIH or VIL
IOH = −4 mA
IOH = −6 mA
IOH = −8 mA
IOL = 100 μA
VIN = VIH or VIL
IOL = 6 mA
IOL = 8 mA
VIN = 0 to 3.6 V
VIN = VIH or VIL
VOUT = 0 to 3.6 V
VIN, VOUT = 0 to 3.6 V
VIN = VCC or GND
VCC <= (VIN, VOUT) <= 3.6 V
TC74VCX2125FT/FK
VCC (V)
2.7 to 3.6
Min
2.0
2.7 to 3.6
2.7 to 3.6
VCC
0.2
2.7 2.2
3.0 2.4
3.0 2.2
2.7 to 3.6
2.7
3.0
3.0
2.7 to 3.6
Max
0.8
0.2
0.4
0.55
0.8
±5.0
Unit
V
V
μA
2.7 to 3.6 ⎯ ±10.0 μA
0
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
10.0
20.0
±20.0
750
μA
μA
VCC (V)
2.3 to 2.7
Min
1.6
2.3 to 2.7
2.3 to 2.7
VCC
0.2
2.3 2.0
2.3 1.8
2.3 1.7
2.3 to 2.7
2.3
2.3
2.3 to 2.7
Max
0.7
0.2
0.4
0.6
±5.0
Unit
V
V
μA
2.3 to 2.7 ⎯ ±10.0 μA
0
2.3 to 2.7
2.3 to 2.7
10.0
20.0
±20.0
μA
μA
4 2007-10-19



TC74VCX2125FK datasheet pdf
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