TC554161AFTI Datasheet PDF - Toshiba Semiconductor

www.Datasheet-PDF.com

TC554161AFTI
Toshiba Semiconductor

Part Number TC554161AFTI
Description STATIC RAM
Page 10 Pages


TC554161AFTI datasheet pdf
View PDF for PC
TC554161AFTI pdf
View PDF for Mobile


No Preview Available !

TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of
10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 mA standby
current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is used to select the device
and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB ,
UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of -40° to 85°C, the TC554161AFTI can be used in environments exhibiting extreme
temperature conditions. The TC554161AFTI is available in a plastic 54-pin thin -small-outline package (TSOP).
FEATURES
· Low-power dissipation
Operating: 55 mW/MHz (typical)
· Single power supply voltage of 5 V ± 10%
· Power down features using CE .
· Data retention supply voltage of 2 to 5.5 V
· Direct TTL compatibility for all inputs and outputs
· Wide operating temperature range of -40° to 85°C
· Standby Current (maximum):
TC554161AFTI
-70,-85,-10 -70L,-85L,-10L
5.5 V
3.0 V
200 mA
100 mA
100 mA
50 mA
· Access Times (maximum):
TC554161AFTI
-70,-70L -85,-85L -10,-10L
Access Time
70 ns 85 ns 100 ns
CE Access Time
70 ns
85 ns 100 ns
OE Access Time
35 ns
45 ns 50 ns
· Package:
TSOP II54-P-400-0.80 (AFTI) (Weight: 0.57 g typ)
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
NC
A3
A2
A1
A0
I/O16
I/O15
VDD
GND
I/O14
I/O13
UB
CE
OP
R/W
I/O12
I/O11
GND
VDD
I/O10
I/O9
NC
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 A4
53 A5
52 A6
51 A7
50 NC
49 I/O1
48 I/O2
47 VDD
46 GND
45 I/O3
44 I/O4
43 LB
42 OE
41 OP
40 NC
39 I/O5
38 I/O6
37 GND
36 VDD
35 I/O7
34 I/O8
33 A8
32 A9
31 A10
30 A11
29 A12
28 NC
(Normal pinout)
A0~A17 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
CE Chip Enable
R/W Read/Write Control
OE Output Enable
LB , UB Data Byte Control
VDD
GND
Power (+5 V)
Ground
NC No Connection
OP* Option
*: OP pin must be open of connected to GND.
2001-08-17 1/10



No Preview Available !

BLOCK DIAGRAM
TC554161AFTI-70,-85,-10,-70L,-85L,-10L
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
I/O16
CE
A0
A1
A2
A3
A11
A12
A13
A14
A15
A16
A17
MEMORY CELL ARRAY
2,048 ´ 128 ´ 16
(4,194,304)
VDD
GND
SENSE AMP
CLOCK
GENERATOR
COLUMN ADDRESS
DECODER
COLUMN ADDRESS
REGISTER
COLUMN ADDRESS
BUFFER
A4 A5 A6 A7 A8 A9 A10
CE
R/W
OE
UB
LB
CE CE
MAXIMUM RATINGS
SYMBOL
RATING
VDD
Power Supply Voltage
VIN Input Voltage
VI/O Input/Output Voltage
PD Power Dissipation
Tsolder
Soldering Temperature (10s)
Tstg Storage Temperature
Topr Operating Temperature
*: -3.0V when measured at a pulse width of 30ns
VALUE
-0.3~7.0
-0.3*~7.0
-0.5~VDD + 0.5
0.6
260
-55~150
-40~85
UNIT
V
V
V
W
°C
°C
°C
2001-08-17 2/10



No Preview Available !

TC554161AFTI-70,-85,-10,-70L,-85L,-10L
DC RECOMMENDED OPERATING CONDITIONS (Ta = -40° to 85°C)
SYMBOL
PARAMETER
VDD
Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
VDH
Data Retention Supply Voltage
*: -3.0V when measured at a pulse width of 30 ns
MIN
4.5
2.4
-0.3*
2.0
TYP
5.0
¾
¾
¾
MAX
5.5
VDD + 0.3
0.6
5.5
UNIT
V
V
V
V
DC CHARACTERISTICS (Ta = -40° to 85°C, VDD = 5 V ± 10%)
SYMBOL
IIL
ILO
IOH
IOL
IDDO1
IDDO2
IDDS1
IDDS2
PARAMETER
Input Leakage
Current
Output Leakage
Current
Output High Current
Output Low Current
Operating Current
Standby Current
TEST CONDITION
MIN TYP MAX UNIT
VIN = 0 V~VDD
¾ ¾ ±1.0 mA
CE = VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD ¾
¾ ±1.0 mA
VOH = 2.4 V
-1.0 ¾ ¾ mA
VOL = 0.4 V
2.1 ¾ ¾ mA
CE = VIL and R/W = VIH,
IOUT = 0 mA,
Other Input = VIH/VIL
tcycle = 70 ns
tcycle = 85 ns, 100 ns
tcycle = 1 ms
¾
¾
¾
¾ 110
¾ 100 mA
15 ¾
CE = 0.2 V and R/W = VDD - 0.2 V,
IOUT = 0 mA,
Other Input = VDD - 0.2 V/0.2 V
tcycle = 70 ns
tcycle = 85 ns, 100 ns
tcycle = 1 ms
¾
¾
¾
¾ 100
¾ 90 mA
10 ¾
CE = VIH
¾¾
3 mA
CE = VDD - 0.2 V,
VDD = 2.0 V~5.5 V
-70,-85,-10
Ta = 25°C
Ta = -40~85°C
Ta = 25°C
-70L,-85L,-10L
Ta = -40~85°C
¾
¾
¾
¾
2¾
¾ 200
mA
25
¾ 100
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN Input Capacitance
VIN = GND
COUT
Output Capacitance
VOUT = GND
Note: This parameter is periodically sampled and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2001-08-17 3/10



No Preview Available !

OPERATING MODE
MODE
CE
Read
L
Write
L
Output Deselect
Standby
* = don't care
H = logic high
L = logic low
L
L
H
TC554161AFTI-70,-85,-10,-70L,-85L,-10L
OE R/W LB
L
LHH
L
L
* LH
L
HH *
* *H
***
UB I/O1~I/O8
L Output
L High-Z
H Output
L Input
L High-Z
H Input
*
High-Z
H
* High-Z
I/O9~I/O16
Output
Output
High-Z
Input
Input
High-Z
High-Z
High-Z
POWER
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDS
2001-08-17 4/10



TC554161AFTI datasheet pdf
Download PDF
TC554161AFTI pdf
View PDF for Mobile


Related : Start with TC554161AFT Part Numbers by
TC554161AFTI STATIC RAM TC554161AFTI
Toshiba Semiconductor
TC554161AFTI pdf
TC554161AFTI-10 STATIC RAM TC554161AFTI-10
Toshiba Semiconductor
TC554161AFTI-10 pdf
TC554161AFTI-10L STATIC RAM TC554161AFTI-10L
Toshiba Semiconductor
TC554161AFTI-10L pdf
TC554161AFTI-70 STATIC RAM TC554161AFTI-70
Toshiba Semiconductor
TC554161AFTI-70 pdf
TC554161AFTI-70L STATIC RAM TC554161AFTI-70L
Toshiba Semiconductor
TC554161AFTI-70L pdf
TC554161AFTI-85 STATIC RAM TC554161AFTI-85
Toshiba Semiconductor
TC554161AFTI-85 pdf
TC554161AFTI-85L STATIC RAM TC554161AFTI-85L
Toshiba Semiconductor
TC554161AFTI-85L pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact