TB1800M Datasheet PDF - Diodes Incorporated

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TB1800M
Diodes Incorporated

Part Number TB1800M
Description 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
Page 4 Pages


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TB0640M - TB3500M
50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE
PROTECTIVE DEVICE
Features
UNDER DEVELOPMENT
· 50A Peak Pulse Current @ 10/1000ms
· 250A Peak Pulse Current @ 8/20ms
· 58 - 320V Stand-Off Voltages
· Oxide-Glass Passivated Junction
· Bi-Directional Protection In a Single Device
· High Off-State impedance and Low On-State
Voltage
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Mechanical Data
A
BC
· Case: SMB, Molded Plastic
· Plastic Material: UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
G
H
· Weight: 0.093 grams (approx.)
· Marking: Date Code and Marking Code (See Page 4)
· Ordering Information: See Page 4
F
E
D
SMB
Dim Min Max
A 4.06 4.57
B 3.30 3.94
C 1.96 2.21
D 0.15 0.31
E 5.21 5.59
F 0.05 0.20
G 2.01 2.62
H 0.76 1.52
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
@10/1000us
Non-Repetitive Peak On-State Current
@8.3ms (one-half cycle)
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Typical Positive Temperature Coefficient for Breakdown Voltage
Symbol
Ipp
ITSM
Tj
TSTG
RqJL
RqJA
DVBR/DTj
Maximum Rated Surge Waveform
Value
50
30
-40 to +150
-55 to +150
20
100
0.1
Unit
A
A
°C
°C
°C/W
°C/W
%/°C
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K20/K21
FCC Part 68
GR-1089-CORE
Ipp (A)
300
250
150
100
75
50
DS30361 Rev. 2 - 1
1 of 4
100
50
Peak Value (Ipp)
tr = rise time to peak value
tp = decay time to half value
Half Value
0
0
tr
tp TIME
TB0640M - TB3500M



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Electrical Characteristics @ TA = 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
VDRM
On-State
Breakover
Voltage
Voltage
@ IT = 1A
VDRM (V) IDRM (uA)
VBO (V)
VT (V)
TB0640M
58
5
77 3.5
TB0720M
65
5
88 3.5
TB0900M
75
5
98 3.5
TB1100M
90
5 130 3.5
TB1300M
120
5
160 3.5
TB1500M
140
5
180 3.5
TB1800M
160
5
220 3.5
TB2300M
190
5
265 3.5
www.DataSheet4TUB.c2o6m00M
220
5
300 3.5
TB3100M
275
5
350 3.5
TB3500M
320
5
400 3.5
Breakover
Current
IBO
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Holding Current
IH
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Off-State
Capacitance
CO (pF)
140
140
140
90
90
90
90
60
60
60
60
Marking Code
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
Notes:
1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
IPP
IBO
IH
IBR
IDRM
VT
V
VBR
VDRM
VBO
UNDER DEVELOPMENT
DS30361 Rev. 2 - 1
2 of 4
TB0640M - TB3500M



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100
10
1
0.1
0.01
VDRM = 50V
0.001
-25 0 25 50 75 100 125 150
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TJ, JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
1.1
1.2
1.15
1.1
VBR= (TJ)
VBR = (TJ = 25°C)
1.05
1
0.95
0.9
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
100
1.05
VBO= (TJ)
VBO = (TJ = 25°C)
10
1
Tj = 25°C
0.95
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 JRelative Variation of Breakover Voltage
vs. Junction Temperature
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5 IH = (TJ)
0.4 IH = (TJ = 25°C)
0.3
-50 -25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
1
1 1.5 2 2.5 3 3.5 4 4.5 5
VT, ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
1
CO= (VR)
CO = (VR = 1V)
Tj = 25°C
f = 1 Mhz
VRMS = 1V
0.1
1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Voltage Bias
DS30361 Rev. 2 - 1
UNDER DEVELOPMENT
3 of 4
TB0640M - TB3500M



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Ordering Information (Note 3)
Device
TB0640M-13
TB0720M-13
TB0900M-13
TB1100M-13
TB1300M-13
TB1500M-13
TB1800M-13
TB2300M-13
TB2600M-13
TB3100M-13
TB3500M-13
Packaging
SMB
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
3000/Tape & Reel
Marking Information
www.DataSheet4U.com
YWW
XXXXX
XXXXX = Product Type Marking Code
YWW = Date Code Marking
Y = Year ex: 2 = 2002
WW = Week
Date Code Key
Year
Code
2002
2
2003
3
2004
4
UNDER DEVELOPMENT
DS30361 Rev. 2 - 1
4 of 4
TB0640M - TB3500M



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