T14L2M16A Datasheet PDF - Taiwan Memory Technology

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T14L2M16A
Taiwan Memory Technology

Part Number T14L2M16A
Description 128K X 16 HIGH SPEED CMOS STATIC RAM
Page 12 Pages


T14L2M16A datasheet pdf
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SRAM
FEATURES
Fast access time : 8/10/12/15 ns
Low-power consumption :
Stand-by current (CMOS input/output)
Max. 300 uA
Single +3.0V to 3.6V Power Supply
TTL compatible , Tri-state output
Common I/O capability
Automatic power-down when deselected
Available in 44-PIN TSOP-II and 48-pin CSP
packages
PART NUMBER EXAMPLES
Part Number
T14L2M16A-10S
T14L2M16A-12C
T14L2M16A-10S
T14L2M16A-12C
Access time
10ns
12ns
10ns
12ns
Package
TSOP-II
CSP
TSOP-II
CSP
Preliminary T14L2M16A
128K X 16 HIGH SPEED
CMOS STATIC RAM
GENERAL DESCRIPTION
The T14L2M16A is a very fast access time
CMOS Static RAM, organized as 131,072 words
by 16 bits . This device is fabricated by high
performance CMOS technology. It can be operated
under wide power supply voltage range from
+3.0V to +3.6V.
The T14L2M16A inputs and three-state
outputs are TTL compatible and allow for direct
interfacing with common system bus structures.
Data retention is guaranteed at a power supply
voltage as low as 2V.
BLOCK DIAGRAM
Vcc
Vss
A0 DECODER
.
.
.
A16
CORE
ARRAY
CE
WE CONTROL
OE
LB
CIRCUIT
UB
DATA I/O
I/O1
.
.
.
I/O16
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
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Publication Date: AUG. 2002
Revision:0.A



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PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP-II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
123456
A LB OE A0 A1 A2 NC
B I/O9
UB
A3
A4
CE I/O1
C I/O10
I/O11
A5
A6
I/O2
I/O3
D VSS
I/O12
NC
A7
I/O4
VCC
E VCC
I/O13
NC
A16
I/O5
VSS
F I/O15
I/O14
A14
A15
I/O6
I/O7
G I/O16
NC
A12
A13
WE
I/O8
H NC
A8
A9
A10
A11
NC
Preliminary T14L2M16A
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
48-Ball CSP TOP VIEW (Ball Down)
PIN DESCRIPTIONS
SYMBOL DESCRIPTIONS
A0 ~ A16 Address inputs
I/O1~I/O16 Data inputs/outputs
CE Chip enable
WE Write enable input
OE Output enable input
SYMBOL DESCRIPTIONS
LB Lower byte (I/O 1~8)
UB Upper byte (I/O 9~16)
VCC Power supply
VSS Ground
NC No connection
TM Technology Inc. reserves the right
P. 2
to change products or specifications without notice.
Publication Date: AUG. 2002
Revision:0.A
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Preliminary T14L2M16A
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on Any Pin Relative to VSS
Power Dissipation
Storage Temperature
Temperature Under Bias
SYM
VR
PD
TSTG
IBIAS
MIN.
-0.5
-
-55
0
MAX.
+4.6 V
1.0
+150
+70
UNIT
V
W
°C
°C
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and function operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
CE OE WE LB UB I/O 1~8 I/O 9~16
MODE
H X* X* X* X* High-Z
High-Z
Deselected
L X* X* H H
High-Z
High-Z
Output Disabled
L H H L X* High-Z
High-Z
Output Disabled
L H H X* L
High-Z
High-Z
Output Disabled
L L H L H Data Out
High-Z
Lower Byte Read
L LHHL
High-Z
Data Out
Upper Byte Read
L L H L L Data Out Data Out
Word Read
L X* L L H
Data In
High-Z
Lower Byte Write
L X* L H L
High-Z
Data In
Upper Byte Write
L X* L L L
Data In
Data In
Word Write
*Note: X = Don’t Care (Must be low or high state), L = Low, H = High
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
TM Technology Inc. reserves the right
P. 3
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: AUG. 2002
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Preliminary T14L2M16A
RECOMMENDED OPERATING CONDITIONS
- (Ta = 0 ~ +70 °C )
PARAMETER
Supply Voltage
Input Voltage
SYM
Vcc
VSS
VIH
VIL
MIN
3.0
0.0
2.0
-0.2
TYP
3.3
0.0
-
-
MAX
3.6
0.0
Vcc+0.3
0.8
UNIT
V
V
V
V
OPERATING CHARACTERISTICS
- (Vcc = 3.0 to 3.6V, VSS = 0V, Ta = 0 ~ +70 °C )
PARAMETER SYM. TEST CONDITIONS
Input Leakage
Current
ILI
Vcc = Max,
VIN = VSS to Vcc
Output Leakage
Current
Operating Power
Supply Current
Standby Power
Supply Current
(TTL Level)
Standby Power
Supply Current
(CMOS Level)
CE= VIH or OE = VIH
ILOor WE = VIL
VIO = VSS to Vcc
Vcc = Max,
CE = VIL ,
ICC VIN = VIH or VIL,
IOUT=0mA,
f=max
CE =VIH ,
ISB other input= VIL or VIH
CE Vcc-0.2V or
ISB1 VIN 0.2V or
VIN Vcc-0.2V
Output Low Voltage VOL IOL = 8.0mA
Output High Voltage VOH IOH = -4.0 mA
-8 -10 -12 -15 UNIT
Min Max Min Max Min Max Min Max
- 1 - 1 - 1 - 1 uA
- 1 - 1 - 1 - 1 uA
- 60 - 55 - 50 - 45 mA
- 15 - 15 - 15 - 15 mA
- 300 - 300 - 300 - 300 uA
- 0.4 - 0.4 - 0.4 - 0.4 V
2.4 - 2.4 - 2.4 - 2.4 - V
TM Technology Inc. reserves the right
P. 4
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: AUG. 2002
Revision:0.A



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