Si7390DP Datasheet PDF - Vishay


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Si7390DP
Vishay

Part Number Si7390DP
Description N-Channel 30 V (D-S) Fast Switching MOSFET
Page 8 Pages

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Si7390DP
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0095 at VGS = 10 V
30
0.0135 at VGS = 4.5 V
ID (A)
15
13
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7390DP-T1-E3 (Lead (Pb)-free)
Si7390DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd for Low Switching Losses
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
- Workstation
• Point-of-Load Conversion
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
VGS
ID
± 20
15
12
9
7
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM ± 50
IS 4.1 1.5
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
5 1.8
3.2 1.1
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
20
53
2.1
Maximum
25
70
3.2
Unit
°C/W
Notes:
a. Surface mounted on 1” x 1” FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72214
S11-0212-Rev. E, 14-Feb-11
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Si7390DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Diode Forward Voltagea
VSD IS = 4.1 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 15 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.7 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.8
40
Typ.
Max.
3.0
± 100
1
5
0.0075
0.0105
45
0.7
0.0095
0.0135
1.1
Unit
V
nA
µA
A
Ω
S
V
10 15
3.5 nC
2.1
0.2 0.8 1.4
Ω
16 30
7 12
43 70 ns
14 25
35 60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
50
40
30
20
10
0
0
3V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
30
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.5
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Document Number: 72214
S11-0212-Rev. E, 14-Feb-11



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Si7390DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
1800
0.024
0.018
0.012
0.006
VGS = 4.5 V
VGS = 10 V
1500
1200
900
600
300 Crss
Ciss
Coss
0.000
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Capacitance
6
VDS = 15 V
ID = 12.5 A
5
4
3
2
1
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
50
15
1.8
VGS = 10 V
1.6 ID = 12.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.040
TJ = 150 °C
10
0.032
0.024
ID = 12.5 A
0.016
1
TJ = 25 °C
0.008
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72214
S11-0212-Rev. E, 14-Feb-11
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Si7390DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6 100
0.4
0.2
ID = 250 µA
0.0
80
60
- 0.2
- 0.4
- 0.6
40
20
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1 1 10 100
Time (s)
Single Pulse Power
600
100
Limited by RDS(on)*
10
1
0.1 TC = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
2
1
Duty Cycle = 0.5
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
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Document Number: 72214
S11-0212-Rev. E, 14-Feb-11




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