Si7388DP Datasheet PDF - Vishay


www.Datasheet-PDF.com

Si7388DP
Vishay

Part Number Si7388DP
Description Fast Switching MOSFET
Page 8 Pages

Si7388DP datasheet pdf
View PDF for PC
Si7388DP pdf
View PDF for Mobile


No Preview Available !

Si7388DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.007 at VGS = 10 V
30
0.010 at VGS = 4.5 V
ID (A)
19
15
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7388DP-T1-E3 (Lead (Pb)-free)
Si7388DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Synchronous Rectifier
D
G
S
N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
19
15
12
9
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM ± 50
IS 4.1 1.6
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
5 1.9
3.2 1.2
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)a
t 10 s
Steady State
RthJA
20
55
25
65 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.0
2.6
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71919
S-80438-Rev. E, 03-Mar-08
www.vishay.com
1



No Preview Available !

Si7388DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 15 A
Forward Transconductancea
gfs VDS = 15 V, ID = 19 A
Diode Forward Voltagea
VSD IS = 4.1 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 5.0 V, ID = 19 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1.0 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 3 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.80
40
Typ.
Max.
1.6
± 100
1
5
0.0058
0.008
40
0.75
0.007
0.010
1.1
Unit
V
nA
µA
A
Ω
S
V
16.3 24
4
5.9
0.5 2.2
14 20
10 15
44 70
20 30
40 70
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
VGS = 10 thru 3 V
40
50
40
30 30
20
10
1V 2V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.5
www.vishay.com
2
Document Number: 71919
S-80438-Rev. E, 03-Mar-08



No Preview Available !

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
2500
Si7388DP
Vishay Siliconix
0.016
0.012
0.008
0.004
VGS = 4.5 V
VGS = 10 V
0.000
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
8 ID = 16 A
50
6
4
2
0
0 7 14 21 28 35
Qg - Total Gate Charge (nC)
Gate Charge
50
2000
1500
Ciss
1000
500
Crss
Coss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 16 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
TJ = 150 °C
10
0.04
0.03
TJ = 25 °C
0.02
0.01
ID = 16 A
1
0.00
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71919
S-80438-Rev. E, 03-Mar-08
www.vishay.com
3



No Preview Available !

Si7388DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 200
0.2 ID = 250 µA
160
0.0
120
- 0.2
80
- 0.4
40
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
1
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
100
Limited
by RDS(on)*
10
1
0.1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
10
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 3
10 - 2
10 - 1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71919
S-80438-Rev. E, 03-Mar-08




Si7388DP datasheet pdf
Download PDF
Si7388DP pdf
View PDF for Mobile


Similiar Datasheets : Si7388DP

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact