Si4441EDY Datasheet PDF - Vishay


www.Datasheet-PDF.com

Si4441EDY
Vishay

Part Number Si4441EDY
Description P-Channel 30-V (D-S) MOSFET
Page 5 Pages

Si4441EDY datasheet pdf
View PDF for PC
Si4441EDY pdf
View PDF for Mobile


No Preview Available !

New Product
P-Channel 30-V (D-S) MOSFET
Si4441EDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.016 at VGS = - 10 V
- 30
0.026 at VGS = - 4.5 V
ID (A)
- 10.6
- 8.3
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4441EDY-T1
Si4441EDY-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 2500 V
APPLICATIONS
• Battery and Load Switching
- Notebook
Pb-free
Available
RoHS*
COMPLIANT
S
G
7600
P-Channel
D
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 10.6
- 8.5
- 8.1
- 6.5
Pulsed Drain Current
IDM - 40
Continuous Source Current (Diode Conduction)a
IS
- 2.1
- 1.3
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
1.5
0.9
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Typical
37
70
16
Maximum
50
85
20
Unit
°C/W
Document Number: 72133
S-60777-Rev. B, 08-May-06
www.vishay.com
1



No Preview Available !

Si4441EDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea rDS(on)
VGS = - 10 V, ID = - 10.6 A
VGS = - 4.5 V, ID = - 8.3 A
Forward Transconductancea gfs VDS = - 15 V, ID = - 10.6 A
Diode Forward Voltagea
VSD IS = - 2.1 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 15 V, VGS = - 10 V, ID = - 10.6 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, RG = 6 Ω
Fall Time
tf
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min
- 1.0
- 40
Typ Max
- 3.0
± 20
±1
-1
-5
0.013
0.020
43
- 0.8
0.016
0.026
- 1.2
45.5
6.5
12.5
5
11
45
35
70
8
20
70
55
Unit
V
µA
mA
µA
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless noted
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20 25
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
30
10000
1000
100
10
1
0.1
0.01
0.001
TJ = 150 °C
TJ = 25 °C
0.0001
0 5 10 15 20 25
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
30
www.vishay.com
2
Work-In-Progress
Document Number: 72133
S-60777-Rev. B, 08-May-06



No Preview Available !

New Product
Si4441EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
40
VGS = 10 thru 5 V
32
4V
30
25
24
16
8 3V
0
0.0
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
0.5 1.0 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
VGS = 4.5 V
VGS = 10 V
8 16 24 32
ID - Drain Current (A)
On-Resistance vs. Drain Current
2.0
40
20
15
10
5
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.5
10
VDS = 15 V
ID = 10.6 A
8
6
4
2
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
1.4
1.3 VGS = 10 V
ID = 10.6 A
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72133
S-60777-Rev. B, 08-May-06
Work-In-Progress
www.vishay.com
3



No Preview Available !

Si4441EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
40
0.10
TJ = 150 °C
10
TJ = 25 °C
0.08
0.06
0.04
0.02
ID = 10.6 A
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
ID = 250 µA
0.4
0.2
0.0
- 0.2
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
60
40
20
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
10 - 2
10 - 1
1
10 100 1000
Time (sec)
Single Pulse Power, Junction-to-Ambient
100
rDS(on) Limited
IDM Limited
10
ID(on)
1 Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
P(t) = 1
P(t) = 10
dc
1 10
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
100
www.vishay.com
4
Work-In-Progress
Document Number: 72133
S-60777-Rev. B, 08-May-06




Si4441EDY datasheet pdf
Download PDF
Si4441EDY pdf
View PDF for Mobile


Similiar Datasheets : Si4441EDY

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact