Si4411DY Datasheet PDF - Vishay


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Si4411DY
Vishay

Part Number Si4411DY
Description P-Channel 30-V (D-S) MOSFET
Page 9 Pages

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P-Channel 30-V (D-S) MOSFET
Si4411DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = - 10 V
- 30
0.0155 at VGS = - 4.5 V
ID (A)
- 13
- 10
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4411DY-T1-E3 (Lead (Pb)-free)
Si4411DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook
- Load Switch
- Battery Switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 13
- 10.5
-9
- 7.5
Pulsed Drain Current
IDM - 50
Continuous Source Current (Diode Conduction)a
IS
- 2.7
- 1.36
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.0 1.5
1.9 0.95
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
70
16
Maximum
42
85
21
Unit
°C/W
Document Number: 72149
S09-0767-Rev. D, 04-May-09
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Si4411DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 13 A
VGS = - 4.5 V, ID = - 10 A
Forward Transconductancea
gfs VDS = - 15 V, ID = - 13 A
Diode Forward Voltagea
VSD IS = - 2.7 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 15 V, VGS = - 5 V, ID = - 13 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 2.1 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
- 1.0
- 30
- 3.0
± 100
-1
- 10
0.008
0.0125
40
- 0.74
0.010
0.0155
- 1.1
V
nA
µA
A
Ω
S
V
43 65
8.5
18.5
3.4
18 30
15 25
140 250
75 120
60 100
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
VGS = 10 V thru 4 V
40
50
40
30 30
20
3V
10
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
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Document Number: 72149
S09-0767-Rev. D, 04-May-09



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
5500
Si4411DY
Vishay Siliconix
0.016
0.012
0.008
VGS = 4.5 V
VGS = 10 V
0.004
0.000
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
6
VDS = 15 V
5 ID = 13 A
4
3
2
1
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
50
4400
3300
Ciss
2200
1100
0
0
Coss
Crss
6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 13 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.030
TJ = 150 °C
10
0.024
0.018
ID = 13 A
1 0.012
TJ = 25 °C
0.006
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72149
S09-0767-Rev. D, 04-May-09
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Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8 50
0.6
ID = 250 µA
0.4
0.2
0.0
40
30
20
- 0.2 10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.01
0.1 1 10 100
Time (s)
Single Pulse Power
600
2
1
Duty Cycle = 0.5
Limited by RDS(on) *
10
1
0.1 TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
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Document Number: 72149
S09-0767-Rev. D, 04-May-09




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