SW7N60H Datasheet PDF - SEMIPOWER

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SW7N60H
SEMIPOWER

Part Number SW7N60H
Description MOSFET
Page 5 Pages


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SAMWIN
SW7N60H
N-channel TO-220F MOSFET
Features
TO-220F
High ruggedness
RDS(ON) (Max 1.32)@VGS=10V
Gate Charge (Typical 28nC)
Improved dv/dt Capability
100% Avalanche Tested
12
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 600V
ID : 7A
RDS(ON) :1.32Ω
2
1
3
Order Codes
Item
1
Sales Type
SW F 7N60
Marking
SW7N60H
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
600
7*
4.4*
28
± 30
172
48
5
28.6
0.2
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
4.41
47.1
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
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SAMWIN
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=600V, VGS=0V
VDS=480V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 3.5A
VDS = 30 V, ID = 3.5A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=300V, ID=7A, RG=25Ω
(note 4,5)
VDS=480V, VGS=10V, ID=7A
(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=7A, VGS=0V
IS=7A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 7mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
600
2
5.5
Min.
SW7N60H
Typ. Max. Unit
V
0.6 V/oC
1
50
100
-100
uA
uA
nA
nA
4V
1.1 1.32
S
1073
87 pF
15
15 25
30 50
ns
69 100
31 50
28 40
6 nC
12
Typ.
289
3.1
Max.
7
28
1.5
Unit
A
A
V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
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SAMWIN
Fig. 1. On-state characteristics
SW7N60H
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
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SAMWIN
Fig. 7. Maximum safe operating area
SW7N60H
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
Same type
as DUT
2mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 10. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
4/5



SW7N60H datasheet pdf
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