SW634 Datasheet PDF - Samwin

www.Datasheet-PDF.com

SW634
Samwin

Part Number SW634
Description N-Channel MOSFET
Page 6 Pages


SW634 datasheet pdf
Download PDF
SW634 pdf
View PDF for Mobile

No Preview Available !

SAMWIN
SW634
Features
N-Channel MOSFET
BVDSS (Minimum)
RDS(ON) (Maximum)
ID
Qg (Typical)
PD (@TC=25 )
: 250 V
: 0.45 ohm
: 8.5 A
: 28 nc
: 72 W
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially
excellent avalanche characteristics. It is mainly
suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low
power switching mode power appliances.
D
www.DataSheet4U.com
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current (@Tc=25)
Continuous Drain Current (@Tc=100)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25)
Derating Factor above 25
(Note 1)
(Note 2)
(Note 1)
(Note 3)
TSTG,TJ
TL
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
250
8.5
6.5
34
±30
250
7.2
5.0
72
0.57
-55 ~ +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.73
- 0.5 -
- - 62.5
REV0.1
1/6
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/ W
/ W
/ W
04.10.1



No Preview Available !

SAMWIN
SW634
Electrical Characteristics (Tc=25unless otherwise noted)
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS/
Tj
Drain- Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS Drain-Source Leakage Current
Gate-Source Leakage Current
www.DataShIGeSeSt4U.comGate-Source Leakage Reverse
On Characteristics
VGS=0V,ID=250uA
ID=250uA,referenced to 25
VDS=250V, VGS=0V
VDS=200V, Tc=125
VGS=30V,VDS=0V
VGS=-30V, VDS=0V
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-state
Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Dynamic Characteristics
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge (Miller Charge)
VDS=VGS,ID=250uA
VGS=10V,ID=4.0A
VGS=0V,VDS=25V, f=1MHz
VDD=125V,ID=8.5A
RG=50ohm
(Note4,5)
VDS=200V,VGS=10V, ID=8.5A
(Note4,5)
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage
Integral Reverse
p-n Junction Diode
in the MOSFET
G
IS=8.5A,VGS=0V
D
s
S
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS=8.5A,VGS=0V,
dIF/dt=100A/us
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH,IAS=8.5A,VDD=50V,RG=0ohm, Starting TJ=25
3. ISD8.5A,di/dt100A/us,VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width300us,Duty Cycle2%
5. Essentially independent of operating temperature.
2/6
REV0.1
Min
250
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
Value
Units
Typ Max
-
0.544
-
-
V
V/
- 1 uA
- 100 nA
-
-100
nA
- 4.0 V
-
0.45
ohm
- 1220
- 130 pF
- 32
- 38
- 38
- 150 ns
- 80
28 36
5 - nc
10 -
Typ.
-
-
Max.
8.5
34
Unit.
A
-
170
0.85
1.5
-
-
V
ns
uc
04.10.1



No Preview Available !

SAMWIN
101
V
GS
top: 15V
10V
9V
8V
7V
6V
5.5V
5V
bottom:4.5V
100 4.5V
SW634
10-1
10-1 100 101
www.DataSheet4U.com
V ,Drain-to-Source voltage [V]
ds
Fig 1. On-State Characteristics
1.00
Fig 2. Transfer Characteristics
0.75
VGS=20V
VGS=10V
0.50
0.25
0.00
0 2 4 6 8 10 12 14
I , Drain Current[A]]
D
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
16
101
150
100
25
Note:
1.v =0v
GS
2.250us test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-Drain Voltage[V]
SD
Fig 4. On State Current vs.
Allowable Case Temperature
12
10
V =200V
DS
V =125V
DS
8
V =50V
DS
6
4
2
0
0 5 10 15 20 25
Q ,Total Gate Charge [nC]
G
Fig 5. Capacitance Characteristics
(Non-Repetitive)
REV0.1
3/6
Fig 6. Gate Charge Characteristics
04.10.1



No Preview Available !

SAMWIN
SW634
1.2
1.1
1.0
0.9
Note:
1.V =0V
GS
2.I =250uA
D
0.8
-100 -50 0 50 100 150 200
www.DataSheet4U.com
T ,Junction Temperature [oC]
J
Fig 7. Breakdown Voltage Variation vs.
Junction Temperature
102
Operation In This Area
Limted By R
DS(ON)
10us
100us
101
1ms
10ms
100
Note:
1.Tc=25 C
2.Tj=150 C
3.Single Pulse
10-1
100
101 102
V ,Drain-Source Voltage[V]
D
103
Fig9. Maximum Safe Operating
3.0
2.5
2.0
1.5
1.0
0.5 Note:
1.V =10V
GS
2.I =4A
D
0.0
-50 0 50 100 150
T ,Junction Temperature[oC]
J
Fig 8. On-Resistance Variation vs.
Junction Temperature
9
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T ,Case Temperature [oC]
c
Fig 10. Maximum Drain Current
Vs. Case Temperature
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
S IN G L E P U L S E
1 0 -4
1 0 -3
t ,S q u a re W
1
ave
1 0 -2
P u ls e
N o te :
1 .Z
(t)= 1 .7 3 oC /w M a x
JC
2 .D u ty F a c to r ,D = t1 /t2
3 .T j-T c = P
*Z
(t)
DM
JC
1 0 -1
100
101
D u r a tio n ( s e c )
Fig 11. Transient Thermal Response Curve
REV0.1
4/6
04.10.1



SW634 datasheet pdf
Download PDF
SW634 pdf
View PDF for Mobile


Related : Start with SW63 Part Numbers by
SW630 N-Channel MOSFET SW630
Samwin
SW630 pdf
SW630A MOSFET SW630A
SEMIPOWER
SW630A pdf
SW634 N-Channel MOSFET SW634
Samwin
SW634 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact