SW601Q Datasheet PDF - SEMIPOWER

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SW601Q
SEMIPOWER

Part Number SW601Q
Description MOSFET
Page 4 Pages


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SAMWIN
SW601Q
Features
RDS(ON) (Max 700)@VGS=0V,ID=3mA
High Switching Speed
General Description
N-channel SOT-23 MOSFET
SOT-23
3
1
2
BVDSS : 600V
ID : 0.185A
RDS(ON) : 700Ω
3
1. Source 2. Gate 3. Drain
2
1
The SW601Q is an N-channel power MOSFET using SAMWIN’s
Advanced technology to provide the customers with high switching
speed.
Order Codes
Item
1
Sales Type
SW E 601Q
Marking
SW601Q
Package
SOT-23
Packaging
REEL
Absolute maximum ratings
Symbol
VDSS
VDGX
ID
IDM
VGSS
PD
TJ
TSTG,
Parameter
Drain to Source Voltage (Note 2)
Drain to Gate Voltage
(Note 2)
Continuous Drain Current (@TC=25oC)
Drain current pulsed
Gate to Source Voltage
Total power dissipation (@TC=25oC)
Junction Temperature
Storage Temperature
Thermal characteristics
Value
600
600
0.185
0.740
± 20
0.5
+ 150
-55 ~ + 150
Unit
V
V
A
A
V
W
oC
oC
Symbol
Rthja
Parameter
Thermal resistance, Junction to ambient
Value
250
Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
Unit
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 1.0
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SAMWIN
SW601Q
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Off characteristics
BVDSS
ID(OFF)
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS=-5V, ID=250uA
VDS=600V, VGS=-5V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
600
VGS(OFF) Gate to Source Cut Off Voltage
IDSS Drain to source leakage current
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=3V, ID=8uA
VDS=25V, VGS=0V
VGS=0V, ID = 3mA
-2.7
7
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VGS=-5~5V, VDD=30V, ID=5mA,
RG=20Ω
VGS=-5~5V, VDD=30V, ID=5mA
Typ. Max. Unit
0.1
100
-100
V
uA
nA
nA
-1.5 V
mA
330 700
15
145
4
40
20
45
280
1300
300
45
pF
ns
nC
Source to drain diode ratings characteristics
Symbol
Parameter
VSD Diode forward voltage drop.
Test conditions
ISD=3mA, VGS=-10V
Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature.
2. Pulse width≤380μs; duty cycle≤2%.
Min.
Typ.
Max. Unit
1.4 V
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 1.0
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SAMWIN
Fig. 1. On-state characteristics
SW601Q
Fig. 2. transfer characteristics
Fig 3. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 4. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 1.0
3/4



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SAMWIN
Fig. 10. Gate charge test circuit & waveform
VGS
VGS
VDS
DUT
10V
QGS
Fig. 11. Switching time test circuit & waveform
SW601Q
QG
QGD
Charge
nC
RGS
VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 13. Peak diode recovery dv/dt test circuit & waveform
DU
T
+ VDS
VGS (DRIVER)
-
IS
L
IS (DUT)
VDS
RG VDD
VGS
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 1.0
4/4



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SW601Q MOSFET SW601Q
SEMIPOWER
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