SW50CPF06 Datasheet PDF - SEMIPOWER

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SW50CPF06
SEMIPOWER

Part Number SW50CPF06
Description Diode
Page 4 Pages


SW50CPF06 datasheet pdf
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SAMWIN
SW50CPF06
DIODE
Features
Ultrafast recovery time
Low forward voltage drop
150 °C operating junction temperature
Low leakage current
Designed and qualified according to
JEDEC-JESD47
TO-3P
12
3
1. Anode 2. Gathode 3. Anode
VR : 620V
IF(AV) : 50A
VF at IF : 1.5V
General Description
This FRED is designed with optimized performance of forward voltage drop and ultrafast
recovery time. the platinum doped life time control, guarantee the best overall performance
ruggedness and reliability characteristics. This devices are intended for use in the
output rectification stage of SMPS, UPS, DC/DC converters as freewheeling diode in
low voltage inverters. Their extremely optimized stored charge and low recovery current
minimize the switching losses and reduce over dissipation in the switching element.
Order Codes
Item Sales Type
1 SW W 50CPF06
Absolute maximum ratings
Marking
SW50CPF06
Package
TO-3P
Packaging
TUBE
Symbol
Parameter
VR
IF(AV)
Repetitive peak reverse voltage
Average rectified forward current (@TC=150oC)
TJ, TStg Operating junction and storage temperatures
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Value
620
50
-55 ~ + 150
Unit
V
A
oC
Min. Typ. Max. Unit
VR Breakdown voltage,blocking voltage
VF Forward voltage
IR Reverse leakage current
CT Junction capacitance
IR=100uA
IF=3A
IF=50A
IF=50A, TJ= 150 °C
VR=600V
VR=600V, TJ= 150 °C
VR=600V
620 V
0.9 1.13 V
1.5 V
1.3 V
500 nA
500 uA
30 pF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
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SAMWIN
SW50CPF06
DYNAMIC RECOVERY CHARACTERISTICS (TJ= 25 °C unless otherwise specified)
Symbol
Parameter
Irrm Peak recovery current
Trr Reverse recovery time
Qrr Reverse recovery Charge
Test conditions
I F=50A, di/dt=200A/us,
VR =100V
Min.
Typ.
5.9
59
190
Max.
Unit
A
ns
nC
THERMAL - MECHANICAL SPECIFICATIONS
Symbol
Rthjc
Rthjc
Rthja
Rthja
Parameter
Thermal resistance, Junction to case (Per Leg)
Thermal resistance, Junction to case (Per Package)
Thermal resistance, Junction to ambient(Per Leg)
Thermal resistance, Junction to ambient(Per Package)
Value
0.57
0.62
35.5
34.3
Unit
oC/W
oC/W
oC/W
oC/W
Fig. 1. Typical Forward Voltage
Drop Characteristics
Fig. 2. Typical Values of Reverse
Current vs. Reverse Voltage
Fig. 3. Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4. Max. Thermal Impedance Z
thJC Characteristics (Per Leg)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
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SAMWIN
Fig 5. Max. Thermal Impedance Z
thJC Characteristics (Per Package)
SW50CPF06
Fig. 6. Typical Reverse Recovery Current
vs. di/dt
Fig. 7. Typical Reverse Recovery Time
vs. di/dt
Fig. 8. Typical Stored Charge vs. di/dt
Fig. 9. Reverse Recovery Parameter Test Circuit & waveform
VGS (DRIVER)
10V
IF (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VR (DUT)
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
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SAMWIN
Fig. 10. Unclamped Inductive Test Circuit
SW50CPF06
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
4/4



SW50CPF06 datasheet pdf
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SEMIPOWER
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