SW1N70C Datasheet PDF - SEMIPOWER

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SW1N70C
SEMIPOWER

Part Number SW1N70C
Description MOSFET
Page 7 Pages


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SAMWIN
SW1N70C
Features
High ruggedness
RDS(ON) (Max 16 )@VGS=10V
Gate Charge (Max 6nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-92
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
N-channel MOSFET
BVDSS : 700V
ID : 0.8A
RDS(ON) : 16ohm
2
1
3
Order Codes
Item
1
Sales Type
SW C 1N70C
Marking
SW1N70C
Package
TO-92
Packaging
TAPE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
700
0.8
0.4
2.4
± 30
52
0.3
4.5
3
0.023
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
RthCS
RthjA
Parameter
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
Value
40
120
Unit
oC/W
oC/W
Mar. 2011. Rev. 2.0
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SAMWIN
SW1N70C
Electrical characteristic ( TC = 25oC unless otherwise specified
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS=0V, ID=250uA
VDS=700V, VGS=0V
VDS=560V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=50uA
VGS=10V, ID = 0.4A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=350V, ID=0.8A, RG=25Ω
VDS=560V, VGS=10V, ID=0.8A
Min.
700
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
- 1 uA
- 10 uA
- 100 nA
- -100 nA
- 4.5 V
15 16
70 100
20 30 pF
46
15 35
75 140
ns
30 60
35 60
7 10
1.3 - nC
2.4 -
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=0.8A, VGS=0V
Trr Reverse recovery time
Qrr Breakdown voltage temperature
IS=0.8A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 95mH, IAS = 0.8A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 0.8A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
150
0.44
Max. Unit
0.8 A
2.4 A
1.5 V
- ns
- uC
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SAMWIN
Fig. 1. On-state characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
50
40
30
V = 10V
GS
20
V = 20V
GS
10
،ط Note : T = 25،ة
J
0
0.0 0.5 1.0 1.5 2.0 2.5
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
SW1N70C
Fig. 2. Transfer characteristics
100
10-1
2
150oC
25oC
-55oC
Notes :
1. V = 50V
DS
2. 250μs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Fig. 4. On state current vs.
diode forward voltage
100
150،ة
25،ة
،ط Notes :
1. V = 0V
GS
2. 250¥ىs Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain voltage [V]
SD
Fig. 6. Gate charge characteristics
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SAMWIN
SW1N70C
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
1.2
1.1
1.0
0.9
0.8
-100
،ط Notes :
1. V = 0 V
GS
2. I = 250 ¥ىA
D
-50 0
50 100 150
T , Junction Temperature [oC]
J
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
،ط Notes :
1. V = 10 V
GS
2. I = 0.5 A
D
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
0.5
0.4
0.3
0.2
0.1
0.0
25
50 75 100 125
T Case Temperature [oC]
C'
150
Fig. 11. Transient thermal response curve
101
Operation in This Area
is Limited by R
DS(on)
100
100 s
1 ms
10 ms
DC
10-1
،ط Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101 102
V , Drain-Source Voltage [V]
DS
103
101
D=0.5
100
10-1
0.2
0.1
0.05
0.02
0.01
single pulse
،ط Notes :
1. Z (t) = 4.2 ،ة/W Max.
¥èJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM
¥èJC
10-2
10-5
10-4
10-3
10-2
10-1
100
t , Square Wave Pulse Duration [sec]
1
101
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