SW13N50B Datasheet PDF - SEMIPOWER

www.Datasheet-PDF.com

SW13N50B
SEMIPOWER

Part Number SW13N50B
Description MOSFET
Page 5 Pages


SW13N50B datasheet pdf
Download PDF
SW13N50B pdf
View PDF for Mobile

No Preview Available !

SAMWIN
SW13N50B
N-channel TO-220F MOSFET
Features
High ruggedness
RDS(ON) (Max 0.52)@VGS=10V
Gate Charge (Typical 29nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching mode power appliances.
BVDSS : 500V
ID : 13A
RDS(ON) : 0.52ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 13N50B
Marking
SW13N50
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
500
13.0*
8.2*
52
±30
828
152
4.5
67.5
0.54
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
1.85
-
44
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5



No Preview Available !

SAMWIN
SW13N50B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=500V, VGS=0V
VDS=400V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 6.5A
VDS = 20 V, ID = 6.5A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=250V, ID=13A, RG=25
(note 4,5)
VDS=400V, VGS=10V, ID=13A
(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=13.0A, VGS=0V
IS=13.0A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 9.8mH, IAS = 13.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 13.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
500
2.0
7
Min.
Typ. Max. Unit
V
0.7 V/oC
1
50
100
-100
uA
uA
nA
nA
4.0 V
0.4 0.52
S
1500
200 pF
45
23 50
40 90
ns
67 140
35 80
29 60
10 nC
9
Typ.
380
5.2
Max.
13.0
52.0
1.5
Unit
A
A
V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
2/5



No Preview Available !

SAMWIN
Fig. 1. On-state characteristics
SW13N50B
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
3/5



No Preview Available !

SAMWIN
Fig. 7. Maximum safe operating areaTO-220F
SW13N50B
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
Same type
as DUT
3.7mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 10. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
4/5



SW13N50B datasheet pdf
Download PDF
SW13N50B pdf
View PDF for Mobile


Related : Start with SW13N50 Part Numbers by
SW13N50 MOSFET SW13N50
SEMIPOWER
SW13N50 pdf
SW13N50B MOSFET SW13N50B
SEMIPOWER
SW13N50B pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact