SW13N50 Datasheet PDF - SEMIPOWER

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SW13N50
SEMIPOWER

Part Number SW13N50
Description MOSFET
Page 7 Pages


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SAMWIN
SW13N50
N-channel MOSFET
Features
High ruggedness
RDS(ON) (Max 0.48)@VGS=10V
Gate Charge (Typ 32nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching mode power appliances.
BVDSS : 500V
ID : 13A
RDS(ON) : 0.48ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 13N50
Marking
SW13N50
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
500
13.0
7.13
52
± 30
240
8.6
4.5
35
0.25
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min. Typ. Max.
Unit
4.17
oC/W
0.5 oC/W
62.5
oC/W
Mar. 2011. Rev. 2.0
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SAMWIN
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
VGS=0V, ID=250uA
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDS=400V, VGS=0V
VDS=320V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID = 3.25A
VGS=0V, VDS=25V, f=1MHz
VDS=200V, ID=6.5A, RG=25Ω
VDS=320V, VGS=10V, ID=6.5A
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=6.5A, VGS=0V
Trr Reverse recovery time
Qrr Breakdown voltage temperature
IS=6.5A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 19.4mH, IAS = 6.5A, VDD = 50V, RG=50Ω, Starting TJ = 25oC
3. ISD ≤ 6.5A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
SW13N50
Typ. Max. Unit
- -V
0.62
- V/oC
- 1 uA
- 10 uA
- 100 nA
- -100 nA
- 4.0 V
0.4 0.48
1600
-
200 - pF
45 -
18 -
23 -
ns
61 -
24 -
47 -
9 - nC
28 -
Typ.
-
-
-
425
3.8
Max. Unit
13.0 A
52 A
1.6 V
- ns
- uC
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SAMWIN
SW13N50
Fig. 1. On-state characteristics
Top : 15V
10V
9V
8V
6V
Bottom : 5.5V
101
100
100
*. Notes :
1. 250us Pulse Test
2. T = 25OC
C
101
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
2.0
1.8
1.6
V = 20V
1.4 GS
V = 10V
GS
1.2
1.0
0.8
0.6
0.4
0
*. Note : T = 25OC
J
5 10 15 20 25 30
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
2500
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
2000
*. Notes :
1. V = 0V
GS
2. f=1MHz
1500
1000
C
iss
500
0
0
C
oss
C
rss
5 10 15 20 25 30 35 40 45 50
V , Drain-Source Voltage [V]
DS
Fig. 2. Transfer characteristics
101
25oC
150oC
100
-55oC
*. Notes :
1. V = 50V
DS
2. 250us Pulse Test
10-1
2 3 4 5 6 7 8 9 10
V , Gate-Source Voltage [V]
GS
Fig. 4. On state current vs.
diode forward voltage
101
100
10-1
0.2
150OC 25OC
*. Notes :
1. V = 0V
GS
2. 250us Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain Voltage [V]
SD
Fig. 6. Gate charge characteristics
12
10
V = 400V
DS
V = 250V
DS
8
6
4
2
*. Note : I = 8.5 A
D
0
0 10 20 30 40
Q , Total Gate Charge [nC]
G
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SAMWIN
SW13N50
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
Fig. 9. Maximum drain current vs.
case temperature.
9
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T Case Temperature [oC]
C'
1.0
0.5
0.0
-100
*. Notes :
1. V = 10 V
GS
2. I = 4.4 A
D
-50 0
50 100 150
T , Junction Temperature [oC]
J
200
Fig. 10. Maximum safe operating area
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
100 s
1 ms
10 ms
DC
،ط Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
V , Drain-Source Voltage [V]
DS
103
Fig. 11. Transient thermal response curve
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
،ط Notes :
1. Z (t) = 1 ،ة/W Max.
¥èJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM ¥èJC
single pulse
10-4
10-3
10-2
10-1
100
t , Square Wave Pulse Duration [sec]
1
101
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