SW100N10B Datasheet PDF - SEMIPOWER

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SW100N10B
SEMIPOWER

Part Number SW100N10B
Description MOSFET
Page 5 Pages


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SAMWIN
SW100N10B
N-channel TO-220 MOSFET
Features
TO-220
High ruggedness
RDS(ON) (Max 10.5m )@VGS=10V
Gate Charge (Typ 106nC)
Improved dv/dt Capability
100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 100V
ID : 100A
RDS(ON) : 10.5m
2
1
3
Order Codes
Item
1
Sales Type
SW P 100N10
Marking
SW 100N10B
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
100
100*
63*
400
± 20
1121
171
5
318
2.5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
0.39
0.5
51.6
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
1/5



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SAMWIN
SW100N10B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=100V, VGS=0V
VDS=80V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
VDS=VGS, ID=250uA
VGS=10V, ID = 50A
VDS =20V, ID = 20A
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=50V, ID=30A, RG=25Ω
(note 45)
VDS=80V, VGS=10V, ID=30A
(note 45)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=50A, VGS=0V
IS=30A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 0.22mH, IAS = 100A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 100A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
100
2
79
Min.
Typ. Max. Unit
V
0.09
V/oC
1
50
100
-100
uA
uA
nA
nA
4V
6.8 10.5 m
S
4571
509 pF
361
42 80
110 160
ns
194 260
117 170
106 150
18 nC
47
Typ.
38
60
Max.
100
400
1.5
Unit
A
A
V
ns
nC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
2/5



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SAMWIN
Fig. 1. On-state characteristics
SW100N10B
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
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SAMWIN
Fig. 7. Maximum safe operating area
SW100N10B
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
Same type
as DUT
6mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig.10. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
4/5



SW100N10B datasheet pdf
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