SUP40N06-25L Datasheet PDF - Vishay Siliconix

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SUP40N06-25L
Vishay Siliconix

Part Number SUP40N06-25L
Description Logic Level
Page 4 Pages


SUP40N06-25L datasheet pdf
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SUP/SUB4w0wNw.D0ata6Sh-ee2t4U5.cLom
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.022 @ VGS = 10 V
0.025 @ VGS = 4.5 V
ID (A)
40
40
TO-220AB
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP40N06-25L
G DS
Top View
SUB40N06-25L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 100_C
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)c
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
60
"20
40
25
100
40
80
90c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t v 10 sec.
PCB Mount (TO-263)c
Free Air (TO-220AB)
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
Symbol
RthJA
RthJC
Limit
40
80
1.6
Unit
_C/W
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SUP/SUB40N06-25L
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 40 A
VDD = 30 V, RL = 0.8 W
ID ] 40 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 40 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Min Typ Max Unit
60
V
1.0 2.0 3.0
"100
nA
1
50 mA
150
40 A
0.022
0.043
0.053
W
0.025
S
1800
350
100
40
9
10
10
9
28
7
60
20
20
50
15
pF
nC
ns
40
A
100
1.0 1.5 V
48 100 ns
6A
0.15
mC
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2-2
Document Number: 70288
S-57253—Rev. C, 24-Feb-98



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SUP/SUB4w0wNw.D0ata6Sh-ee2t4U5.cLom
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
VGS = 10, 9, 8, 7 V
6V
5V
80
60
45
60
4V
40
30
20
3V
15
0
0 2 4 6 8 10
VDS – Drain-to-Source Voltage (V)
Transconductance
70
TC = –55_C
60
50 25_C
40 125_C
30
0
0
0.04
0.03
0.02
20
0.01
10
0
0
3000
10 20 30 40 50
ID – Drain Current (A)
Capacitance
60
0
0
10
Transfer Characteristics
TC = 125_C
25_C
–55_C
1234
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
VGS = 4.5 V
VGS = 10 V
10 20 30 40 50 60
ID – Drain Current (A)
Gate Charge
2500
2000
1500
Ciss
1000
500
0
0
Crss
Coss
15 30 45
VDS – Drain-to-Source Voltage (V)
60
8
VDS = 30 V
ID = 40 A
6
4
2
0
0 10 20 30 40
Qg – Total Gate Charge (nC)
50
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
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SUP/SUB40N06-25L
Vishay Siliconix
www.DataSheet4U.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 20 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.5
0
–50 –25 0
25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
THERMAL RATINGS
Drain Current vs. Case Temperature
50
40
30
20
10
1
0
0.3 0.6 0.9 1.2
VSD – Source-to-Drain Voltage (V)
1.5
Safe Operating Area
200
100
Limited
by rDS(on)
10
1
TC = 25_C
Single Pulse
100 ms
1 ms
10 ms
100 ms
dc, 1 s
0
0
2
25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.1
0.1
1 10
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
100
0.2
0.1
0.1
0.05
0.01
10–5
0.02
Single Pulse
10–4
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2-4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
13
Document Number: 70288
S-57253—Rev. C, 24-Feb-98



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