STW43NM50N Datasheet PDF - ST Microelectronics


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STW43NM50N
ST Microelectronics

Part Number STW43NM50N
Description Power MOSFETs
Page 9 Pages

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Features
STW43NM50N
N-channel 500 V - 0.065 - 37 A - TO-247
second generation MDmesh™ Power MOSFET
Preliminary Data
Type
STW43NM50N
VDSS @
Tjmax
550 V
RDS(on)
<0.085
ID
37 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STW43NM50N
Marking
43NM50N
Package
TO-247
Packaging
Tube
November 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical ratings
1 Electrical ratings
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Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (1)
PTOT
dv/dt (2)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD 37A, di/dt 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting TJ=25°C, ID=IAS, VDD=50V)
STW43NM50N
Value
500
± 25
37
23
148
255
Tbd
–55 to 150
150
Unit
V
V
A
A
A
W
V/ns
°C
°C
Value
0.49
62.5
300
Unit
°C/W
°C/W
°C
Value
Tbd
Tbd
Unit
A
mJ
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STW43NM50N
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
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Table 5. On/off states
Symbol
Parameter
Test conditions
Drain-source
V(BR)DSS breakdown voltage
dv/dt (1) Drain source voltage slope
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1 mA, VGS = 0
VDD= 400 V, ID = 37 A,
VGS=10 V
VDS = Max rating
VDS = Max rating, @125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 18.5 A
1. Characteristic value at turn off on inductive load
Min. Typ. Max. Unit
500 V
Tbd V/ns
1 µA
100 µA
100 nA
2 3 4V
0.065 0.085
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=15 V, ID = 18.5 A
VDS = 50 V, f = 1 MHz,
VGS = 0
Tbd S
pF
Tbd
pF
Tbd
pF
Tbd
Coss eq. (2)
Equivalent output
capacitance
VGS = 0 V, VDS = 0 V to 400 V
Tbd
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDD = 400 V, ID = 37 A,
VGS = 10 V,
(see Figure 3)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
Tbd nC
Tbd nC
Tbd nC
Tbd
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
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Electrical characteristics
STW43NM50N
Table 7. Switching times
Symbol
Parameter
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td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 250 V, ID = 18.5 A
RG = 4.7 VGS = 10 V
(see Figure 2)
Min. Typ. Max. Unit
Tbd ns
Tbd ns
Tbd ns
Tbd ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 37 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 37 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25 °C
(see Figure 4)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 37 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 4)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
37
148
Tbd
Tbd
Tbd
Tbd
Tbd
Tbd
Tbd
A
A
V
ns
µC
A
ns
µC
A
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