STU435S Datasheet PDF - SamHop Microelectronics

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STU435S
SamHop Microelectronics

Part Number STU435S
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 8 Pages


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Gr
Pr
STU/D435S
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-38A
17.5 @ VGS=10V
27 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Sigle Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
-40
±20
-38
-30.4
-115
156
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,01,2011
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STU/D435S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-19A
VGS=-4.5V , ID=-15A
VDS=-10V , ID=-19A
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-20V,ID=-19A,VGS=-10V
VDS=-20V,ID=-19A,VGS=-4.5V
VDS=-20V,ID=-19A,
VGS=-10V
-1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS= -4A
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, n_ot subject to product_ion testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
Typ Max Units
1
±100
V
uA
nA
-1.7 -3
V
14 17.5 m ohm
20 27 m ohm
36 S
1950
229
186
pF
pF
pF
24 ns
38 ns
11 ns
8 ns
42 nC
20 nC
3.4 nC
11 nC
-0.78 -1.3 V
Jul,01,2011
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STU435S
60
VGS = 10V
50
40
VGS = 4.5V
VGS = 4V VGS = 3.5V
30
20 VGS = 3V
10
0
0 1.0 2.0 3.0
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
36
30
VGS = 4.5V
24
18
12 VGS = 10V
6
0
1 12 24 36 48 60
-ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
VDS = VGS
ID = 250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.0
35
-55 C
28 Tj=125 C
21
14
7
25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.5
1.4 VGS=10V
ID=19A
1.3
1.2
VGS=4.5V
1.1 ID=15A
1.0
0.9
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
ID = 250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,01,2011
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STU435S
60
ID = 19A
50
40
30
75 C
20
125 C
25 C
10
0
0 2 4 6 8 10
-VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
20.0
10.0
5.0
125 C
Ver 1.0
75 C 25 C
1.0
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
2400
2100
1800
1500
Ciss
1200
900
600
300
0
0
Coss
Crss
5 10 15
20 25
30
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
10
VDS = 20V
8 ID = 19A
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
10
Tr
TD(on)
TD(off )
Tf
100
R DS(ON) Limit
100us
1ms
10 DC10ms
VDS=20V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
4
1
0.3
0.1
VGS=-10V
Single Pulse
TA=25 C
1
10 100
-VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Jul,01,2011
www.samhop.com.tw



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STU435S P-Channel Logic Level Enhancement Mode Field Effect Transistor STU435S
SamHop Microelectronics
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