STU419S Datasheet PDF - SamHop Microelectronics

www.Datasheet-PDF.com

STU419S
SamHop Microelectronics

Part Number STU419S
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 8 Pages


STU419S datasheet pdf
View PDF for PC
STU419S pdf
View PDF for Mobile


No Preview Available !

STU/D419SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-58A
11.5 @ VGS=10V
16 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current-Continuous(Package limited) TC=25°C
ID
-Continuous(Silicon limited)
TC=25°C
-Continuous a
TA=25°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
Maximum Power Dissipation
PD Maximum Power Dissipation a
TC=25°C
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-40
±20
-50
-58
-11
-175
224
70
2.5
-55 to 150
1.8
50
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,15,2008
www.samhop.com.tw



No Preview Available !

STU/D419S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-20A
VGS=-4.5V , ID=-17A
VDS=-10V , ID=-20A
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN=3.3 ohm
VDS=-20V,ID=-20A,VGS=-10V
VDS=-20V,ID=-20A,VGS=-4.5V
VDS=-20V,ID=-20A,
VGS=-10V
-1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Is Maximum Continuous Drain-Source Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS= -2.0A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,VDD = 30V .(See Figure13)
Typ Max Units
V
1 uA
±10 uA
-1.5 -3
V
9.6 11.5 m ohm
12.5 16 m ohm
9S
3550
710
420
40
70
345
125
87
42
9
20
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-2.0
-0.77 -1.3
A
V
Sep,15,2008
2 www.samhop.com.tw



No Preview Available !

STU/D419S
25
V GS =-10V
20
V GS =-4.5V
15
V GS =-2.5V
10
5
V GS =-2V
0
0 0.5 1 1.5 2 2.5 3
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
20
15
10
5
-55 C
1
T j=125 C
25 C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
24
20
16
V GS =4.5V
12
8 V GS =10V
4
0
1 5 10 15 20 25
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.8
1.6
V G S =-10V
1.4 ID=-20A
V G S =-4V
1.2 ID=-17A
1.0
0.8
0
25 50 75 100 125 150
T j( C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
1.10 ID=-250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,15,2008
3 www.samhop.com.tw



No Preview Available !

STU/D419S
30
125 C
25
75 C
20
25 C
15
ID=-20A
10
5
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4800
4000
3200
C is s
2400
1600
C oss
800
C rss
0
05
10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
125 C
15.0
25 C
10.0
5.0
Ver 1.0
75 C
1.0
0 0.4 0.8 1.2 1.6 2.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =-20V
8 ID=-20A
6
4
2
0
0 12.5 25 37.5 50 62.5 75 87.5 100
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
6000
1000
600
100
T D(off)
Tf
Tr
T D(on)
10
1 3 6 10
VDS=-20V,ID=-1A
VGS=-10V
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
500
100 R DS(ON) Limit
100us
1ms
10 DC10ms
1
V GS =-10V
S ingle P ulse
T A=25 C
0.1 1
10 40 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Sep,15,2008
4 www.samhop.com.tw



STU419S datasheet pdf
Download PDF
STU419S pdf
View PDF for Mobile


Related : Start with STU419 Part Numbers by
STU419S P-Channel Logic Level Enhancement Mode Field Effect Transistor STU419S
SamHop Microelectronics
STU419S pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact