STU417S Datasheet PDF - SamHop Microelectronics

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STU417S
SamHop Microelectronics

Part Number STU417S
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 8 Pages


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STU/D417SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-40V
-43A
14 @ VGS=-10V
23 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-40
±20
-43
-34.4
-130
225
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Aug,23,2010
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STU/D417S
Ver 1.2
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-21.5A
VGS=-4.5V , ID=-16.8A
VDS=-10V , ID=-21.5A
-1.7
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN= 6 ohm
VDS=-20V,ID=-21.5A,VGS=-10V
VDS=-20V,ID=-21.5A,VGS=-4.5V
VDS=-20V,ID=-21.5A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage b
VGS=0V,IS= -5A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
Typ Max Units
1
±100
V
uA
nA
-2 -3 V
14 m ohm
23 m ohm
44 S
2620
360
265
pF
pF
pF
51 ns
91 ns
325 ns
112 ns
65 nC
31 nC
6.2 nC
19 nC
-0.8 -1.3 V
Aug,23,2010
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STU/D417S
70
V GS =-10V
56
42
V GS =-5V
V GS =-4.5V
V GS =-4V
28 V GS =-3.5V
14 V GS =-3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.2
35
28
21
T j=125 C
14
25 C -55 C
7
0
0 0.9 1.8 2.7 3.6 4.5 5.4
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
30
25
20 V GS =4.5V
15
10 V GS =10V
5
1
1 14 28 42 56 70
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.5
1.4 V G S =-10V
I D =-2 1 . 5 A
1.3
1.2
1.1 V G S =-4.5V
I D =-1 6 . 8 A
1.0
0
0 25 50 75 100 125 150
T j( C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4 V DS =V GS
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
1.10 ID=-250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,23,2010
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STU/D417S
36
ID=-21.5A
30
24
18
75 C
12
6
125 C
25 C
0
0 2 4 6 8 10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3600
3000
2400
Cis s
1800
1200
Cos s
600
C rss
0
05
10
15
20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.2
60
125 C
10
75 C
25 C
1
0 0.3 0.6 0.9 1.2 1.5
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=-20V
8 ID=-21.5A
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
60
10
TD(off )
Tf
Tr
TD(on)
100
R DS(ON) Limit
100us
1ms
10 DC10ms
1
VDS=-20V,ID=-1A
VGS=-10V
1 10 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1
0.1
0.1
VGS=-10V
Single Pulse
TA=25 C
1
10 100
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Aug,23,2010
4 www.samhop.com.tw



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