STU307S Datasheet PDF - SamHop Microelectronics

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STU307S
SamHop Microelectronics

Part Number STU307S
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 8 Pages


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STU/D307SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-53A
9.5 @ VGS=-10V
14 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-53
-42
-160
42
27
-55 to 150
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
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STU/D307S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
RDS(ON)
gFS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VDS=VGS , ID=-250uA
VGS=-10V , ID=-26.5A
VGS=-4.5V , ID=-21A
VDS=-5V , ID=-26.5A
-1
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
VDS=-15V,VGS=0V
f=1.0MHz
tD(ON)
tr
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=-15V
ID=-1.0A
VGS=-10V
RGEN= 6 ohm
VDS=-15V,ID=-25A,VGS=-10V
VDS=-15V,ID=-25A,VGS=-4.5V
VDS=-15V,ID=-25A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Is Maximum Continuous Drain-Source Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS= -12A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ
-1.8
7.5
10.5
52
3100
850
400
45
85
340
150
75
35
8
22
-0.8
Max Units
V
1 uA
±10 uA
-3 V
9.5 m ohm
14 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-12 A
-1.3 V
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STU/D307S
100
VG S = -10V
80
VG S = -4.5V
VG S = -4V
60 VGS = -3.5V
40
VG S = -3V
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
40
32
24
125 C
16
25 C
8
-55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
30
25
20
15
10
5
1
1
VG S = -4.5V
VG S = -10V
20 40
60 80 100
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8
1.6
V G S =-10V
1.4 ID=-26.5A
1.2
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STU/D307S
30
ID=-26.5A
25
20
15
10
75 C
5
125 C
25 C
0
024
6 8 10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4200
3500
2800
Cis s
2100
1400
700
C rss
0
05
Cos s
10 15
20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
60
125 C
25 C
10
75 C
1
0 0.25 0.50 0.75 1.00 1.25
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=-15V
8 ID=-25A
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
60
10
TD(off )
Tf
Tr
TD(on)
1
VDS=-15V,ID=-1A
VGS=-10V
1 10 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1000
100 R DS(ON) Limit
10
VGS=-10V
Single Pulse
TA=25 C
1
0.1 1
DC10ms 1ms
100us
10
100
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
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SamHop Microelectronics
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