STTH1210 Datasheet PDF - STMicroelectronics

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STTH1210
STMicroelectronics

Part Number STTH1210
Description Ultrafast recovery - high voltage diode
Page 11 Pages


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STTH1210
Ultrafast recovery - high voltage diode
Main product characteristics
IF(AV)
VRRM
Tj
VF (typ)
trr (typ)
12 A
1000 V
175° C
1.30 V
48 ns
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated packages:
– TO-220Ins
Electrical insulation = 2500 VRMS
Capacitance = 7 pF
– TO-220FPAC
Electrical insulation = 2500 VRMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
A
A
K
TO-220AC
STTH1210D
K
A
NC
D2PAK
STTH1210G
Order codes
Part Number
STTH1210D
STTH1210G
STTH1210G-TR
STTH1210FP
STTH1210DI
March 2006
Rev 1
K
A
K
TO-220FPAC
STTH1210FP
A
K
TO-220Ins
STTH1210DI
Marking
STTH1210D
STTH1210G
STTH1210G
STTH1210FP
STTH1210DI
1/11
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Characteristics
1 Characteristics
STTH1210
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
TO-220AC / D2PAK / TO-220FPAC
TO-220AC Ins
TO-220AC / D2PAK Tc = 125° C
TO-220FPAC
Tc = 40° C
TO-220AC Ins
Tc = 95° C
tp = 5 µs, F = 5 kHz square
tp = 10 ms Sinusoidal
Maximum operating junction temperature
1000
30
20
12
120
80
-65 to + 175
175
Unit
V
A
A
A
A
°C
°C
Table 2. Thermal parameters
Symbol
Rth(j-c) Junction to case
Parameter
TO-220AC / D2PAK
TO-220FPAC
TO-220AC Ins
Value
1.9
5.4
3.1
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25° C
Tj = 100° C
IF = 12 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.033 IF2(RMS)
10
3 30
2.0
1.40 1.8
1.30 1.7
µA
V
2/11
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STTH1210
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
S Softness factor
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
IF = 12 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 12 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 12 A dIF/dt = 50 A/µs
VFR = 1.5 x VFmax, Tj = 25° C
IF = 12 A, dIF/dt = 50 A/µs,
Tj = 25° C
Min. Typ Max. Unit
67 90
48 65
ns
15 20
A
2
400 ns
5V
Figure 1.
P(W)
30
25
20
15
Conduction losses versus
average current
=0.05
=0.1
=0.2
=0.5
=1
10
T
5
IF(AV)(A)
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Figure 2. Forward voltage drop versus
forward current
IFM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
1.0 1.5 2.0 2.5
Tj=25°C
(Maximum values)
VFM(V)
3.0 3.5 4.0
4.5
5.0
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
Single pulse
TO-220AC
0.8
TO-220Ins
D²PAK
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
Single pulse
TO-220FPAB
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
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Characteristics
STTH1210
Figure 5.
IRM(A)
35
VR=600V
30 Tj=125°C
Peak reverse recovery current
versus dIF/dt (typical values)
IF= 2 x IF(AV)
25 IF= IF(AV)
20
IF=0.5 x IF(AV)
15
10
5
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery time versus dIF/dt
(typical values)
trr(ns)
500
450
400
350
300
250
200
150
100
50
0
0 50
IF= 2 x IF(AV)
IF= IF(AV)
VR=600V
Tj=125°C
dIF/dt(A/µs)
IF=0.5 x IF(AV)
100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery charges
versus dIF/dt (typical values)
Qrr(µC)
3.5
VR=600V
3.0 Tj=125°C
IF= 2 x IF(AV)
2.5
2.0
IF= IF(AV)
1.5
1.0 IF=0.5 x IF(AV)
0.5
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8. Softness factor versus dIF/dt
(typical values)
S factor
3.0
2.5
IF = 2 x IF(AV)
VR=600V
Tj=125°C
2.0
1.5
1.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Sfactor
IF = IF(AV)
VR=600V
Reference: Tj=125°C
IRM
QRR
50
tRR
Tj(°C)
75 100
125
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
45
IF = IF(AV)
40 Tj=125°C
35
30
25
20
15
10
5
0
0 100
dIF/dt(A/µs)
200 300 400
500
4/11
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