STTH1202 Datasheet PDF - STMicroelectronics


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STTH1202
STMicroelectronics

Part Number STTH1202
Description Ultrafast recovery diode
Page 10 Pages

STTH1202 datasheet pdf
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STTH1202
Ultrafast recovery diode
Main product characteristics
IF(AV)
VRRM
Tj (max)
VF (typ)
trr (typ)
12 A
200 V
175° C
0.82 V
18 ns
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
High junction temperature
Insulated packages
– TO-220FPAC
Electrical insulation 1500 VRMS
– TO-220AC Ins
Electrical insulation 2500 VRMS
Description
The STTH1202 uses ST's new 200V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, and
TO-220AC Ins, this device is intended for use in
low voltage, high frequency inverters, free
wheeling and polarity protection.
A
K
A
K
TO-220AC
STTH1202D
K
A
K
TO-220FPAC
STTH1202FP
A
K
TO-220AC Ins
STTH1202DI
Order codes
Part Number
STTH1202D
STTH1202FP
STTH1202DI
Marking
STTH1202
STTH1202
STTH1202DI
March 2007
Rev 1
1/10
www.st.com
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Characteristics
1 Characteristics
STTH1202
Table 1.
Symbol
Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Parameter
Value
Unit
VRRM
VRSM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
TO-220AC
Tc = 140° C
Average forward current, δ = 0.5
TO-220AC Ins
Tc = 130° C
TO-220FPAC
Tc = 105° C
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
tp = 10 µs F = 5 kHz square
tp = 10 ms Sinusoidal
Maximum operating junction temperature
200
200
30
12
130
100
-65 to + 175
175
V
A
A
A
A
°C
°C
Table 2. Thermal parameters
Symbol
Rth(j-c)
Junction to case
Parameter
TO-220AC
TO-220AC Ins
TO-220FPAC
Value
2.5
3
5
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 150° C
Tj = 25° C
VR = VRRM
IF = 12 A
Tj = 125° C IF = 15 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.77 x IF(AV) + 0.015 x IF2(RMS)
10
µA
10 100
1.0 1.10
0.82 0.95
1.15 V
0.91 1.05
0.87 1.0
2/10
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STTH1202
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
IF = 12 A, dIF/dt = -200 A/µs,
VR = 160 V, Tj = 125° C
IF = 12 A, dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
IF = 12 A, dIF/dt = 100 A/µs,
Tj = 25° C
Min. Typ Max. Unit
28 35 ns
18 24
5.8 7.5 A
110 ns
2V
Figure 1. Peak current versus duty cycle
IM(A)
80
60
IM T
δ=tp/T
tp
40 P = 5W
P = 2W
P = 1W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 2. Forward voltage drop versus
forward current (typical values)
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0
0.4
Tj=150°C
(maximum values)
Tj=150°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
0.8 1.2 1.6 2.0 2.4
2.8
Figure 3.
Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
TO-220AC Ins)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AC
TO-220AC Ins
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220FPAC
0.1
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
3/10
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Characteristics
STTH1202
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
1
VR(V)
10 100
1000
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
Qrr(nC)
200
180
VR=160V
IF=12A
160
140
120
100
80
60
40
20
0
10
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
Figure 7. Reverse recovery time versus dIF/dt Figure 8. Peak reverse recovery current
(typical values)
versus dIF/dt (typical values)
trr(ns)
100
90
80
70
Tj=125°C
VR=160V
IF=12A
IRM(A)
14
VR=160V
IF=12A
12
10
60
50
40
30
20
10
0
10
Tj=25°C
dIF/dt(A/µs)
100
1000
8
6
4
2
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
Figure 9. Dynamic parameters versus
junction temperature
Qrr;IRM [Tj]/IRM [Tj=125°C]
1.4
VR=160V
IF=12A
1.2
1.0
IRM
0.8
QRR
0.6
0.4
0.2
Tj(°C)
0.0
25 50 75 100 125 150
4/10
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