STTH12010TV Datasheet PDF - STMicroelectronics


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STTH12010TV
STMicroelectronics

Part Number STTH12010TV
Description Ultrafast recovery - high voltage diode
Page 8 Pages

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STTH12010TV
Ultrafast recovery - high voltage diode
Main product characteristics
IF(AV)
VRRM
Tj
VF (typ)
trr (typ)
2 x 60 A
1000 V
150° C
1.30 V
49 ns
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated package
– Electrical insulation = 2500 VRMS
Capacitance = 45 pF
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment
A1 K1
A2 K2
A1
K1
A2
K2
ISOTOP
STTH12010TV1
Order codes
Part Number
STTH12010TV1
STTH12010TV2
A1 K2
K1 A2
A1
K2
K1
A2
ISOTOP
STTH12010TV2
Marking
STTH12010TV1
STTH12010TV2
March 2006
Rev 1
1/8
www.st.com
8
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Characteristics
1 Characteristics
STTH12010TV
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5 Per diode
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
1000
150
Tc = 50° C
60
750
400
-65 to + 150
150
V
A
A
A
A
°C
°C
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-c)
Rth(c)
Junction to case
Coupling thermal resistance
Per diode
Total
When the diodes are used simultaneously:
Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Value
0.80
0.45
0.1
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 100° C
Tj = 150° C
VR = VRRM
IF = 60 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.0067 IF2(RMS)
20
20 200
2.0
1.40 1.80
1.30 1.70
µA
V
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STTH12010TV
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
S Softness factor
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25° C
IF = 60 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 60 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 60 A dIF/dt = 100 A/µs
VFR = 1.5 x VFmax, Tj = 25° C
IF = 60 A, dIF/dt = 100 A/µs,
Tj = 25° C
Min. Typ Max. Unit
115
61 80 ns
49 65
31 40
A
1
750 ns
4V
Figure 1. Conduction losses versus
average current
P(W)
140
120
=0.05
=0.1
=0.2
=0.5
=1
100
80
60
40
20
0
0
T
IF(AV)(A)
10 20 30 40 50 60 70
80
Figure 2. Forward voltage drop versus
forward current
IFM(A)
200
180
160
Tj=150°C
(Maximum values)
140
120
100
Tj=150°C
(Typical values)
Tj=25°C
(Maximum values)
80
60
40
20 VFM(V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9 Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
70
VR=600V
60 Tj=125°C
50
40
IF=0.5 x IF(AV)
IF= IF(AV)
IF= 2 x IF(AV)
30
20
10
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
3/8
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Characteristics
STTH12010TV
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
trr(ns)
1000
900
800
IF= 2 x IF(AV)
VR=600V
Tj=125°C
700
600
500
IF= IF(AV)
400
300
200
100
0
0
dIF/dt(A/µs)
IF=0.5 x IF(AV)
50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
Qrr(µC)
10
VR=600V
Tj=125°C
8
IF= 2 x IF(AV)
IF= IF(AV)
6
4 IF=0.5 x IF(AV)
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 7. Softness factor versus
dIF/dt (typical values)
S factor
1.50
1.25
IF = 2 x IF(AV)
VR=600V
Tj=125°C
1.00
0.75
0.50
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Sfactor
IF = IF(AV)
VR=600V
Reference: Tj=125°C
IRM
QRR
tRR
50 75
Tj(°C)
100
125
4/8
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