STS6601 Datasheet PDF - SamHop Microelectronics

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STS6601
SamHop Microelectronics

Part Number STS6601
Description P-Channel Enhancement Mode Field Effect Transistor
Page 7 Pages


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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS6601
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
-60V
-3.2A
110 @ VGS=-10V
160 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-26 package.
S OT 26
Top View
D 16 D
D 25 D
G 34 S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-60
±20
-3.2
-2.6
-12
2
1.28
-55 to 150
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,30,2008
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STS6601
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-48V , VGS=0V
VGS= ±20V , VDS=0V
-60
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-3.2A
VGS=-4.5V , ID=-2.6A
VDS=-10V , ID=-3.2A
VDS=-30V,VGS=0V
f=1.0MHz
-1.0
VDD=-30V
ID=-1A
VGS=-10V
RGEN=6 ohm
VDS=-30V,ID=-3.2A,VGS=-10V
VDS=-30V,ID=-3.2A,VGS=-4.5V
VDS=-30V,ID=-3.2A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=-2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ Max Units
-1
±100
V
uA
nA
-2.0 -3
V
88 110 m ohm
120 160 m ohm
6.3 S
745 pF
69 pF
42 pF
12
12
65.8
22
13.5
6.5
1.5
3.2
ns
ns
ns
ns
nC
nC
nC
nC
-2.0
-0.8 -1.2
A
V
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STS6601
10
VGS = -10V
VGS = -4.5V
8 VGS = -3.5V
6
VGS = -4V
4 VGS = -3V
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
15
12
9
6
25 C
3
125 C
-55 C
0
0 0.9 1.8 2.7 3.6 4.5 5.2
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
240
200
160
VG S = -4.5V
120
80 VGS =-10V
40
1
1 2 4 6 8 10
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8
V G S =-10V
1.6 ID=-3.2A
1.4
1.2 V G S =-4.5V
ID= -2.6A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4 V DS =V GS
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STS6601
300
ID=-3.2A
250
200
125 C
150
100 75 C
50
25 C
0
0 2 4 6 8 10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
1000
800
600
Cis s
400
Cos s
200
0 C rss
05
10 15
20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
10
125 C
25 C
Ver 1.0
75 C
1
0 0.3 0.6 0.9 1.2 1.5
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 VDS=-30V
ID=-3.2A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
600
100
60
10
TD(off)
TD(on)
Tr
Tf
1 V DS =-30V,ID=-1A
V G S =-10V
1
6 10
60 100 300 600
Rg, Gate Resistance()
Figure 11. switching characteristics
50
10 R DS(ON) Limit
1
100us
10ms1ms
DC
0.1
V GS =-10V
S ingle P ulse
Tc=25 C
0.01
0.1 1
10 100 300
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
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