STS6409 Datasheet PDF - SamHop Microelectronics

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STS6409
SamHop Microelectronics

Part Number STS6409
Description P-Channel Enhancement Mode Field Effect Transistor
Page 7 Pages


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re
Pro
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS6409
Ver 1.0
PRODUCT SUMMARY
VDSS
-20V
ID
-4.0A
RDS(ON) (mΩ) Max
49 @ VGS=-4.5V
50 @ VGS=-4.0V
52 @ VGS=-3.7V
58 @ VGS=-3.1V
65 @ VGS=-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
SOT 26
Top View
D 16
D 25
G 34
D
D
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-20
±10
-4.0
-3.2
-15
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Aug,22,2012
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STS6409
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-16V , VGS=0V
VGS= ±10V , VDS=0V
-20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-1mA
VGS=-4.5V , ID=-2.0A
VGS=-4.0V , ID=-2.0A
VGS=-3.7V , ID=-2.0A
VGS=-3.1V , ID=-2.0A
VGS=-2.5V , ID=-2.0A
VDS=-5V , ID=-2.0A
VDS=-10V,VGS=0V
f=1.0MHz
VDD=-16V
ID=-2.0A
VGS=-4.5V
RGEN= 6 ohm
VDS=-16V,ID=-4.0A,
VGS=-4.5V
-0.5
31
32
33
36
39
Typ
-0.7
38
39
40
44
49
11
613
159
141
85
225
1310
605
11.8
0.85
4.7
Max Units
V
1 uA
±10 uA
-1.5 V
49 m ohm
50 m ohm
52 m ohm
58 m ohm
65 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=-1.1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
-0.8 -1.2 V
Aug,22,2012
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STS6409
Ver 1.0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10 RDS(ON) Limit
1
10us
100us
1ms
10ms
0.1 VGS=-4.5V
Single Pulse
TA=25 C
0.01
0.1
1
1s
DC
10
-VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2
Mounted on FR-4 board of
1.5 1 inch2 , 2oz
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on FR-4 board of
1 inch2 , 2oz
10
1
Single Pulse
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - s
3
100 1000
Aug,22,2012
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STS6409
Ver 1.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VGS = 4.5 V
16 4.0 V
3.7 V
12
3.1 V
2.5 V
8
4
0
0 0.2 0.4 0.6 0.8 1
-VDS - Drain to Source Voltage - V
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
ID = -1.0mA
0.9
0.8
0.7
0.6
0.5
0.4
-50
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
VGS = -2.5 V
-3.1 V
60
-3.7 V
-4.0 V
-4.5 V
40
20
0
0.1 1 10 100
-ID - Drain Current - A
4
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0
125°C
75°C
25°C
TA = -25°C
0.5 1 1.5 2 2.5 3
-VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -25°C
10
25°C
1 75°C
125°C
0.1
0.01
0.01
0.1 1
10
-ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
ID = -4.0A
60
40
20
0
0 2 4 6 8 10 12
-VGS - Gate to Source Voltage - V
Aug,22,2012
www.samhop.com.tw



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SamHop Microelectronics
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