STS3401A Datasheet PDF - SamHop Microelectronics

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STS3401A
SamHop Microelectronics

Part Number STS3401A
Description P-Channel Enhancement Mode Field Effect Transistor
Page 7 Pages


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STS3401AGre
Pro
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-3.2A
79 @ VGS=-10V
127 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-3.2
-2.6
-12
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
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STS3401A
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-1.6A
VGS=-4.5V , ID=-1.3A
VDS=-5V , ID=-1.6A
VDS=-15V,VGS=0V
f=1.0MHz
-1.0
VDD=-15V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-15V,ID=-1.6A,VGS=-10V
VDS=-15V,ID=-1.6A,VGS=-4.5V
VDS=-15V,ID=-1.6A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=-1.6A
Typ
-1.6
63
94
6
345
85
69
7.2
12.5
7.5
9
8.6
4.5
0.55
2.5
-0.84
Max Units
-1
±100
V
uA
nA
-3.0 V
79 m ohm
127 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-1.2 V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
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STS3401A
15
VGS = -10V
12 VGS = -4.5V
9
VGS = -4V
VGS = -3.5V
6
VGS = -3V
3
VGS = -2.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
180
150
120
VGS = -4.5V
90
60 VGS = -10V
30
1
1 3 6 9 12 15
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
10
-55 C
8 25 C
Tj=125 C
6
4
2
0
0 123456
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
1.5
1.4 VGS = -10V
ID = -1.6A
1.3
1.2
1.1
VGS = -4.5V
ID = -1.3A
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(°C ) Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = -250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = -250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STS3401A
300
ID = -1.6A
250
200
150
125 C
100
50 75 C 25 C
0
0 2 4 6 8 10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
480
400
Ciss
320
240
160
Crss
80
Coss
0
0 5 10 15 20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
5.0 25 C
125 C
75 C
1.0
0
0.4 0.8 1.2 1.6 2.0
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS = -15V
ID = -1.6A
6
4
2
0
0 2.4 4.8 7.2 9.6
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
Tr
10 Tf
TD(on)
TD(off)
VDS = -15V,ID = -1A
VGS = -10V
1
1 10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
4
10
1
R DS(ON) Limit
DC10s1001m0sm1s ms100us
0.1
VGS = -10V
Single Pulse
TA = 25 C
0.03
0.1 1
10 30
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jun,29,2011
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