STRH100N10 Datasheet PDF - ST Microelectronics


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STRH100N10
ST Microelectronics

Part Number STRH100N10
Description TO-254AA rad-hard low gate charge STripFET Power MOSFET
Page 17 Pages

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STRH100N10
N-channel 100 V, 0.030 , TO-254AA
rad-hard low gate charge STripFET™ Power MOSFET
Features
VBDSS
100 V
ID
48 A
RDS(on)
30 mOhm
Qg
135 nC
Fast switching
100% avalanche tested
Hermetic package
70 krad TID
Single event effect (SEE) hardened
SEB & SEGR with 32 Mev/cm²/mg LET ions
Applications
Satellite
High reliability
Description
This Power MOSFET is realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to sustain high
TID and provide immunity to heavy ion effects. It
is also intended for any application with low gate
charge drive requirements. This Power MOSFET
is full ESCC qualified.
TO-254AA
3
2
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Part number (1)
ESCC part
number
Quality
level
Package
Lead
finish
STRH100N10FSY1
-
Engineering
model
STRH100N10FSY301 5205/021/01
TO-254AA
ESCC flight
STRH100N10FSY302 5205/021/02
Gold
Solder
dip
1. Depending ESCC part number mentioned on the purchase order.
May 2010
Doc ID 17486 Rev 1
Mass (g) Temp. range EPPL
-
0.45 -55 to 125°C Target
-
1/17
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Contents
Contents
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STRH100N10
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 Doc ID 17486 Rev 1



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STRH100N10
1 Electrical ratings
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Electrical ratings
(TC= 25 °C unless otherwise specified)
Table 2. Absolute maximum ratings (pre-irradiation)
Symbol
Parameter
Value
VDS (1) Drain-source voltage (VGS = 0)
100
VGS (2)
ID (3)
ID (3)
IDM (4)
PTOT (3)
dv/dt (5)
Gate-source voltage
Drain current (continuous)
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total dissipation
Peak diode recovery voltage slope
±20
48
30
192
170
2.6
Tstg Storage temperature
TJ Operating junction temperature
- 55 to 150
1. This rating is guaranteed @ TJ 25 °C (see Figure 10: Normalized BVDSS vs temperature).
2. This value is guaranteed over the full range of temperature.
3. Rated according to the Rthj-case + Rthc-s.
4. Pulse width limited by safe operating area.
5. ISD 48 A, di/dt 100 A/µs, VDD = 80% V(BR)DSS.
Unit
V
V
A
A
A
W
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthc-s Case-to-sink typ
Value
0.52
0.21
Unit
°C/W
°C/W
Table 4.
Symbol
Avalanche characteristics
Parameter
IAR
EAS(1)
EAS
EAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ=25 °C, ID= IAR, VDD=50 V)
Single pulse avalanche energy
(starting TJ=110 °C, ID= IAR, VDD=50 V)
Repetitive avalanche
(Vdd = 50 V, IAR = 24 A, f = 10 KHz, TJ = 25 °C,
duty cycle = 50%)
Value
24
954
280
60
Unit
A
mJ
mJ
mJ
Doc ID 17486 Rev 1
3/17



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Electrical ratings
Table 4.
Symbol
Avalanche characteristics (continued)
Parameter
Repetitive avalanche
(Vdd = 50 V, IAR = 24 A, f = 100 KHz, TJ = 25 °C,
duty cycle = 10%)
EAR
Repetitive avalanche
(Vdd = 50 V, IAR = 24 A, f = 100 KHz, TJ = 110
°C, duty cycle = 10%)
1. Maximum rating value.
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STRH100N10
Value
24
7.7
Unit
mJ
4/17 Doc ID 17486 Rev 1




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