STPSC406 Datasheet PDF - ST Microelectronics

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STPSC406
ST Microelectronics

Part Number STPSC406
Description Schottky Barrier 600 V power Schottky silicon carbide diode
Page 8 Pages


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STPSC406
600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
K
A
K
TO-220AC
STPSC406D
K
A
NC
DPAK
STPSC406B
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
4A
600 V
175 °C
3 nC
September 2009
Doc ID 16283 Rev 1
1/8
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Characteristics
1 Characteristics
www.DaStaTSPheSeCt44U0.c6om
Table 2.
Symbol
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
600
IF(RMS) Forward rms current
11
IF(AV)
Average forward
current
DPAK, Tc = 110 °C, δ = 0.5
TO-220AC, Tc = 95 °C, δ = 0.5
4
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
14
10
40
IFRM
Repetitive peak forward DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1
current
TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1
14
Tstg Storage temperature range
Tj Operating junction temperature(1)
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
-55 to +175
-40 to +175
Table 3. Thermal resistance
V
A
A
A
A
°C
°C
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
T0-220AC
DPAK
5.5
4.5
°C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min. Typ. Max.
IR (1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 150 °C
-
-
VF (2) Forward voltage drop
Tj = 25 °C
IF = 4 A
Tj = 150 °C
-
-
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.20x IF(AV) + 0.3 x IF2(RMS)
10 50
60 500
1.55 1.9
1.9 2.4
Unit
µA
V
Table 5.
Symbol
Other parameters
Parameter
Qc Total capacitive charge
C Total capacitance
Test conditions
Vr = 400 V, IF = 4 A dIF/dt = -200 A/µs
Tj = 150 °C
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
Typ.
3
200
20
Unit
nC
pF
2/8 Doc ID 16283 Rev 1



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STPSC406
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Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(A)
8
7
6 Tj=25 °C
5
4
3
Tj=150 °C
Tj=175 °C
2
1 VFM(V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Figure 2.
Reverse leakage current versus
reverse voltage applied
(maximum values)
IR(µA)
1.E+04
1.E+03
Tj=175 °C
1.E+02
Tj=150 °C
1.E+01
1.E+00
1.E-01
1.E-02
0
Tj=25 °C
VR(V)
50 100 150 200 250 300 350 400 450 500 550 600
Figure 3.
IM(A)
35
δ=0.1
30
25
Peak forward current versus case
temperature (TO-220AC)
T
δ=tp/T
tp
20
δ=0.3
15
δ=0.5
10
5 dδ=1 dδ=0.7
0
TC(°C)
0 25 50 75 100 125 150 175
Figure 4. Peak forward current versus case
temperature (DPAK)
IM(A)
35
30
δ=0.1
25
T
δ=tp/T
tp
20 δ=0.3
15 δ=0.5
10
5 dδ=1 dδ=0.7
0
0 25 50
TC(°C)
75 100 125 150 175
Figure 5.
C(pF)
150
125
100
75
50
25
0
1
Junction capacitance versus
reverse voltage applied
(typical values)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
10
100
1000
Figure 6.
Relative variation of thermal
impedance junction to case
versus pulse duration (TO-220AC)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-05
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00 1.E+01
Doc ID 16283 Rev 1
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Characteristics
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Figure 7.
Relative variation of thermal
impedance junction to case
versus pulse duration (DPAK)
Zth(j c)/Rth(j c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00 1.E+01
Figure 8.
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
IFSM(A)
1.E+03
1.E+02
1.E+01
Tc=25 °C
Tc=125 °C
1.E+00
1.E-05
1.E-04
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 9.
Total capacitive charges versus dIF/dt (typical values)
QC(nC)
7
IF=4 A
6 VR=400 V
Tj=150 °C
5
4
3
2
1 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
4/8 Doc ID 16283 Rev 1



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STPSC406 Schottky Barrier 600 V power Schottky silicon carbide diode STPSC406
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