STPSC1206 Datasheet PDF - ST Microelectronics

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STPSC1206
ST Microelectronics

Part Number STPSC1206
Description Schottky Barrier 600 V power Schottky silicon carbide diode
Page 7 Pages


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STPSC1206
600 V power Schottky silicon carbide diode
Features
No reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
Description
These diodes are manufactured using silicon
carbide substrate. This wide bandgap material
supports the manufacture of a Schottky diode
structure with a high voltage rating. Such diodes
exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of
the temperature.
Using these diodes will significantly reduce the
switching power losses of the associated MOS-
FET, and thus increase the efficiency of the
overall application. These diodes will then
outperform the power factor correction circuit
operating in hard switching conditions.
A
K
TO-220AC
STPSC1206D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
12 A
600 V
175 °C
12 nC
September 2009
Doc ID 16288 Rev 1
1/7
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Characteristics
1 Characteristics
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Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
IFSM Surge non repetitive forward current
IFRM
Tstg
Tj
Repetitive peak forward current
Storage temperature range
Operating junction temperature
Tc = 110 °C, δ = 0.5
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
Tc = 105 °C, Tj = 150 °C, δ = 0.1
600
30
12
50
40
200
50
-55 to +175
-40 to +175
Unit
V
A
A
A
A
°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case
Maximum value
1.75
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
IR (1) Reverse leakage current
VF (2) Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 12 A
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.075 x IF2(RMS)
-
-
-
-
Typ.
30
200
1.4
1.6
Max.
150
1500
1.7
2.1
Unit
µA
V
Table 5.
Symbol
Other parameters
Parameter
Qc Total capacitive charge
C Total capacitance
Test conditions
Vr = 400 V, IF = 12 A
dIF/dt = -200 A/µs, Tj = 150 °C
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
Typ.
12
750
65
Unit
nC
pF
2/7 Doc ID 16288 Rev 1



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STPSC1206
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Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(A)
24
22
20
18
16
14
12
10
8
6
4
2
0
0.0
0.5
Tj=25 °C
1.0 1.5
Tj=150 °C
Tj=175 °C
VFM(V)
2.0 2.5 3.0
Figure 2.
IR(µA)
1.E+04
1.E+03
1.E+02
Reverse leakage current versus
reverse voltage applied
(maximum values)
Tj=150 °C
Tj=175 °C
1.E+01
1.E+00
1.E-01
0
Tj=25 °C
VR(V)
50 100 150 200 250 300 350 400 450 500 550 600
Figure 3. Peak forward current versus case
temperature
IM(A)
110
100 δ=0.1
90
80
70
60 δ=0.3
50 δ=0.5
40
30
20 dδ=1
10
dδ=0.7
0
0 25
50
T
δ=tp/T
tp
TC(°C)
75 100 125 150 175
Figure 4.
C(pF)
600
500
400
300
200
100
0
1
Junction capacitance versus
reverse voltage applied
(typical values)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
10
100
1000
Doc ID 16288 Rev 1
3/7



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Characteristics
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Figure 5.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
Figure 6.
IFSM(A)
1.E+03
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
1.E+02
Tc=25 °C
Tc=125 °C
1.E+01
1.E-05
1.E-04
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 7.
Total capacitive charges versus dIF/dt (typical values)
QC(nC)
22
20 IF=12 A
VR=400 V
18 Tj=150 °C
16
14
12
10
8
6
4
2 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
4/7 Doc ID 16288 Rev 1



STPSC1206 datasheet pdf
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STPSC1206 Schottky Barrier 600 V power Schottky silicon carbide diode STPSC1206
ST Microelectronics
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