STP200N4F3 Datasheet PDF - STMicroelectronics

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STP200N4F3
STMicroelectronics

Part Number STP200N4F3
Description N-channel Power MOSFET
Page 14 Pages


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STP200N4F3
STB200N4F3
N-channel 40V - 0.0035- 120A - D2PAK - TO-220
planar STripFET™ Power MOSFET
Features
Type
STB200N4F3
STP200N4F3
VDSS RDS(on) Max
40V <0.0040
40V <0.0044
ID
120A
120A
Pw
300W
300W
100% avalanche tested
Standard threshold drive
Applications
Switching applications
– Automotive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility. this
new improved device has been specifically
designed for automotive applications.
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB200N4F3
STP200N4F3
Marking
200N4F3
200N4F3
Package
D²PAK
TO-220
Packaging
Tape & reel
Tube
October 2007
Rev 2
1/14
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Contents
Contents
STB200N4F3 - STP200N4F3
www.datas1heet4u.com Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB200N4F3 - STP200N4F3
1 Electrical ratings
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Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID (1)
ID (1)
IDM (2)
PTOT
EAS (3)
dv/dt(4)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Single pulse avalanche energy
Peak diode recovery voltage slope
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID = 60A, VDD= 25V
4. ISD 60A, di/dt 440 A/µs, VDD V(BR)DSS, Tj TJMAX.
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb (1) Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
1. When mounted on FR-4 board, 1inch² 2 oz. Cu.
Electrical ratings
Value
40
±20
120
120
480
300
2.0
862
4.2
-55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
Value
TO-220
D²PAK
0.50
--
62.5
35
--
Unit
°C/W
°C/W
°C/W
3/14



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Electrical characteristics
2 Electrical characteristics
STB200N4F3 - STP200N4F3
(TCASE=25°C unless otherwise specified)
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Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
40
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
10 µA
100 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
4V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 80A
D²PAK
TO-220
0.0035 0.0040
0.0040 0.0044
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =10V, ID = 80A
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=20V, ID = 120A
VGS =10V
(see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Typ.
200
5100
1270
37
75
23
17
Max. Unit
S
pF
pF
pF
nC
nC
nC
4/14



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STMicroelectronics
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