STM4639 Datasheet PDF - SamHop Microelectronics

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STM4639
SamHop Microelectronics

Part Number STM4639
Description P-Channel Enhancement Mode Field Effect Transistor
Page 8 Pages


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Green
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STM4639
Ver 2.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-14A
8.5 @ VGS=-10V
13 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Procteced
SO-8
1
D5
D6
D7
D8
4G
3S
2S
1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted )
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-14
-11.2
-79
180
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
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STM4639
Ver 2.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS= -24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-14A
VGS=-4.5V , ID=-11.3A
VDS=-10V , ID=-14A
VDS=-15V,VGS=0V
f=1.0MHz
VDD=-15V
ID=-1A
VGS=-10V
RGEN=3 ohm
VDS=-15V,ID=-14A,VGS=-10V
VDS=-15V,ID=-14A,VGS=-4.5V
VDS=-15V,ID=-14A,
VGS=-10V
-0.8
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=-2.0A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=3.0mH,VDD = 30V,VGS=10V.(See Figure13)
Typ
-1.7
7
9.8
32
4049
641
351
24
68
484
188
95
40
6
23
-0.7
Max Units
V
-1 uA
±10 uA
-2.0 V
8.5 m ohm
13 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-2.0 A
-1.2 V
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STM4639
25
VG S = -10V
20
VG S = -4.5V
15 VG S = -2.5V
10
VG S = -2V
5
0
0 0.5 1 1.5 2 2.5 3
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
18
15
12
VG S = 4.5V
9
6 VG S = 10V
3
0
1 5 10 15 20 25
-ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4 V DS =V GS
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Ver 2.1
20
15
10
5
-55 C
1
Tj=125 C
25 C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-V G S , G ate-to-S ource Voltage (V )
Figure 2. Transfer Characteristics
1.8
1.6
1.4 V G S =-10V
ID=-14A
1.2
V G S =-4.5V
I D =-1 1 . 3 A
1.0
0.8
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
1.10 ID=-250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
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STM4639
30
25 125 C
20 75 C
25 C
15
ID=-14A
10
5
0
024
6 8 10
-VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4800
4000
C is s
3200
2400
1600
C oss
800
C rss
0
0 5 10 15 20 25 30
-VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
Ver 2.1
20.0
10.0
5.0
25 C
125 C
75 C
1.0
0
0.3 0.6 0.9 1.2 1.5
-VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =-15V
8
ID=-14 A
6
4
2
0
0 12.5 25 37.5 50 62.5 75 87.5 100
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
5000
1000
100
TD(off)
Tf
Tr
TD(on)
10
VDS=-15V,ID=-1A
VGS=-10V
1 3 6 10
60 100
Rg, Gate Resistance (W)
Figure 11.switching characteristics
4
100
R DS(ON) Limit
10
1
100m1s0m1sm1s00us
1s
DC
V GS =-10V
S ingle P ulse
0.1 T c=25 C
0.1 1
10 100
-VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Jul,03,2014
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