STL25N15F4 Datasheet PDF - ST Microelectronics

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STL25N15F4
ST Microelectronics

Part Number STL25N15F4
Description Power MOSFETs
Page 12 Pages


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STL25N15F4
N-channel 150 V, 0.057 , 6 A, PowerFLAT™(5x6)
STripFET™ DeepGATE™ Power MOSFET
Features
Type
STL25N15F4
VDSS
150 V
RDS(on)
max
< 0.063
ID
6A
N-channel enhancement mode
100% avalanched rated
Low gate charge
Very low on-resistance
Application
Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
PowerFLAT™(5x6)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL25N15F4
Marking
25N15F4
Package
PowerFLAT™ (5x6)
Packaging
Tape and reel
September 2009
Doc ID 16220 Rev 1
1/12
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Contents
Contents
www.DSaTtLa2Sh5eNe1t45UF.c4om
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves)
........................... 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/12 Doc ID 16220 Rev 1



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STL25N15F4
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID(1)
ID (2)
ID (2)
IDM(3)
PTOT (1)
PTOT (2)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Total dissipation at TC = 25 °C
Tstg Storage temperature
Tj Operating junction temperature
1. The value is rated according to Rthj-c
2. The value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
Rthj-pcb (1) Thermal resistance junction-pcb max
Rthj-case
Thermal resistance junction-case (drain)
(steady state) max.
1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
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Value
150
± 20
25
6
3.75
24
80
4
-55 to 150
Unit
V
V
A
A
A
A
W
W
°C
Value
31.3
1.56
Unit
°C/W
°C/W
Max value
12.5
125
Unit
A
mJ
Doc ID 16220 Rev 1
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Electrical characteristics
2 Electrical characteristics
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(TJ = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDS = 150 V,
VDS = 150 V, @125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 3 A
Min. Typ. Max. Unit
150 V
1 µA
10 µA
±100 nA
2 4V
0.057 0.063
Table 6.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Rg Gate input resistance
Test conditions
Min. Typ. Max. Unit
VDS =25 V, f = 1 MHz,
VGS = 0
VDD = 75 V, ID = 6 A
VGS =10 V
(see Figure 14)
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
2710
- 180 -
69.5
48
- 10.8 -
13.7
- 1.9 -
pF
pF
pF
nC
nC
nC
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 75 V, ID= 3 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
13.5
5.1
--
39.7
11.4
ns
ns
ns
ns
4/12 Doc ID 16220 Rev 1



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