STGW45NC60VD Datasheet PDF - ST Microelectronics

No Preview Available ! www.datasheet4u.com STGW45NC60VD 45 A - 600 V - very fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode Applications ■ High frequency inverters ■ UPS ■ Motor drivers ■ Induction heating Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 3 2 1 TO-247 long leads Figure 1. Internal schematic diagram Table 1. Device summary Order code STGW45NC60VD Marking GW45NC60VD Package TO-247 long leads Packaging Tube March 2008 Rev 1 1/15 www.st.com 15

No Preview Available ! Contents Contents STGW45NC60VD www.datas1heet4u.com Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 7 2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15

No Preview Available ! STGW45NC60VD 1 Electrical ratings www.datasheet4u.com Table 2. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) IC(1) Collector current (continuous) at 25 °C IC (1) Collector current (continuous) at 100 °C ICL (2) Turn-off latching current ICP (3) Pulsed collector current VGE Gate-emitter voltage IF Diode RMS forward current at TC = 25 °C IFSM Surge non repetitive forward current (tp=10 ms sinusoidal) PTOT Total dissipation at TC = 25 °C Tj Operating junction temperature 1. Calculated according to the iterative formula: IC(TC) = ----------------------------------T----J---M------A----X------–----T----C------------------------------------- RTHJ – C × VCESAT(MAX)(TC, IC) 2. Vclamp = 80%(VCES), Tj = 150 °C, RG = 10 Ω, VGE= 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Thermal resistance Symbol Parameter Rthj-case Rthj-case Rthj-amb Thermal resistance junction-case (IGBT) max Thermal resistance junction-case (diode) max Thermal resistance junction-ambient max Electrical ratings Value 600 90 50 220 220 ± 20 30 120 270 – 55 to 150 Unit V A A A A V A A W °C Value 0.46 1.5 50 Unit °C/W °C/W °C/W 3/15

No Preview Available ! Electrical characteristics 2 Electrical characteristics STGW45NC60VD (TCASE=25 °C unless otherwise specified) www.datasheet4u.com Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation VGE = 15 V, IC = 30 A voltage VGE = 15 V, IC = 30 A,TC=125 °C 1.8 2.4 1.7 V V VGE(th) Gate threshold voltage VCE= VGE, IC=1 mA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE= 600 V, TC = 125 °C 500 µA 5 mA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ±100 nA gfs (1) Forward transconductance VCE = 15 V, IC= 30 A 20 S 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 5. Dynamic Symbol Parameter Cies Coes Cres Qg Qge Qgc Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. Max. Unit VCE = 25 V, f = 1 MHz, VGE= 0 290 0 298 59 pF pF pF VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 19) 126 nC 16 nC 46 nC 4/15

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Very Fast IGBT

ST Microelectronics

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