STGW45HF60WD Datasheet PDF - ST Microelectronics


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STGW45HF60WD
ST Microelectronics

Part Number STGW45HF60WD
Description ultra fast IGB
Page 9 Pages

STGW45HF60WD datasheet pdf
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Features
Improved Eoff at elevated temperature
Low CRES / CIES ratio (no cross-conduction
susceptibility)
Ultra fast soft recovery antiparallel diode
Applications
Welding
Induction heating
High frequency converters
Power factor correction
Description
The "HF" series is based on a new planar
technology concept to yield an IGBT with tighter
variation of switching energy (Eoff) versus
temperature. Suffix "W" denotes a subset of
products tailored to high switching frequency
operation over 100 kHz.
STGW45HF60WD
45 A, 600 V ultra fast IGBT
Preliminary data
TO-247
3
2
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW45HF60WD
GW45HF60WD
Package
TO-247
Packaging
Tube
April 2009
Doc ID 15593 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
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Electrical ratings
1 Electrical ratings
STGW45HF60WD
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Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
VCES
IC (1)
IC (1)
ICP(2)
ICL (3)
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Collector current (pulsed)
Turn-off latching current
VGE Gate-emitter voltage
IF Diode RMS forward current at TC = 25 °C
IFSM Surge not repetitive forward current tp= 10 ms sinusoidal
PTOT Total dissipation at TC = 25 °C
Tstg Storage temperature
Tj Operating junction temperature
1. Calculated according to the iterative formula:
600
70
45
TBD
TBD
± 20
30
120
250
– 55 to 150
IC(TC)
=
-------------------------------------T---j--(--m----a---x---)---–----T----C--------------------------------------
Rthj c × VCE(sat)(max)(Tj(max), IC(TC))
2. Pulse width limited by max junction temperature
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 , TJ = 150 °C
Unit
V
A
A
A
A
V
A
A
W
°C
Table 3.
Symbol
Thermal data
Parameter
Thermal resistance junction-case IGBT
Rthj-case
Thermal resistance junction-case diode
Rthj-amb Thermal resistance junction-ambient
Value
0.5
1.5
50
Unit
°C/W
°C/W
°C/W
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STGW45HF60WD
2 Electrical characteristics
Electrical characteristics
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(TJ = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 1 mA
600 V
VCE(sat)
Collector-emitter saturation VGE = 15 V, IC= 30 A
voltage
VGE = 15V, IC = 30 A,TJ= 125 °C
1.9 2.5
TBD
V
V
VGE(th) Gate threshold voltage
VCE = VGE, IC = 250µA
3.75 5.75 V
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, TJ = 125 °C
500 µA
5 mA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20 V
± 100 nA
gfs Forward transconductance VCE = 15 V, IC = 30 A
TBD
S
Table 5.
Symbol
Dynamic
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCE = 390 V, IC = 30 A,
VGE = 15 V,
Figure 3
Min. Typ. Max. Unit
TBD
- TBD -
TBD
TBD
- TBD -
TBD
pF
pF
pF
nC
nC
nC
Doc ID 15593 Rev 1
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Electrical characteristics
STGW45HF60WD
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
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td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 30 A
RG = 10 , VGE = 15 V,
Figure 2
VCC = 390 V, IC = 30 A
RG = 10 , VGE = 15 V,
TJ = 125 °C Figure 2
VCC = 390 V, IC = 30 A,
RGE = 10 , VGE = 15 V
Figure 2
VCC = 390 V, IC = 30 A,
RGE = 10 , VGE =15 V,
TJ = 125 °C
Figure 2
Min. Typ. Max. Unit
TBD
ns
- TBD - ns
TBD
A/µs
TBD
ns
- TBD - ns
TBD
A/µs
TBD
- TBD -
TBD
ns
ns
ns
TBD
- TBD -
TBD
ns
ns
ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 30 A
RG = 10 , VGE = 15 V,
Figure 4
300
- 250
550
µJ
µJ
µJ
Eon(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 30 A
RG = 10 , VGE = 15 V,
TJ = 125 °C Figure 4
550 µJ
- 500 750 µJ
1050
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 4. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
VF Forward on-voltage
IF = 30 A
IF = 30 A, TJ = 125 °C
trr Reverse recovery time
IF = 30 A,VR = 50 V,
Qrr Reverse recovery charge di/dt = 100 A/µs
Irrm Reverse recovery current (see Figure 5)
trr Reverse recovery time
IF = 30 A,VR = 50 V,
Qrr Reverse recovery charge di/dt = 100 A/µs
Irrm Reverse recovery current TJ =125 °C, (see Figure 5)
Min. Typ. Max. Unit
1.6
--
1.4
45
- 56 -
2.55
100
- 290 -
5.8
V
V
ns
nC
A
ns
nC
A
4/9 Doc ID 15593 Rev 1




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