STF8810 Datasheet PDF - SamHop Microelectronics

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STF8810
SamHop Microelectronics

Part Number STF8810
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 7 Pages


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STF8810Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
20V
ID
8.0A
RDS(ON) (mΩ) Max
16.0 @ VGS=4.5V
17.0 @ VGS=4.0V
18.0 @ VGS=3.7V
21.0 @ VGS=3.1V
27.5 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
PIN 1
S1
D1/D2
G2
S2
S2
TDFN 2X3
(Bottom view)
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±12
8.0
6.4
48
1.56
1.00
-55 to 150
80
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
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STF8810
Ver 1.3
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±8V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=2.0A
VGS=4.0V , ID=2.0A
VGS=3.7V , ID=2.0A
VGS=3.1V , ID=2.0A
VGS=2.5V , ID=2.0A
VDS=10V , ID=4.0A
VDS=10V,VGS=0V
f=1.0MHz
VDD=16V
ID=4.0A
VGS=4.0V
RGEN=6 ohm
VDS=16V,ID=8.0A,
VGS=4.0V
0.5
10.0
10.5
11.0
12.5
16.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=8.0A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
0.9
13.0
13.5
14.0
16.0
20.5
16
307
144
69
68
293
697
567
9
1.8
5.4
0.88
Max Units
V
1 uA
±1 uA
1.5 V
16.0 m ohm
17.0 m ohm
18.0 m ohm
21.0 m ohm
27.5 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Jul,18,2014
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STF8810
Ver 1.3
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10 RDS(ON) Limit
10us
1
0.1 VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1 1
100us
1ms
10ms
100ms
DC
10
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2 Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on FR-4 board of
100 1 inch2 , 2oz
10
1
Single Pulse
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - s
3
100 1000
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STF8810
Ver 1.3
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
VGS = 4.5 V
4.0 V
20
3.7 V
3.1 V
10
2.5 V
0
0 0.2 0.4 0.6 0.8 1
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.4
ID = 1.0mA
1.2
1
0.8
0.6
0.4
-50
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40 VGS = 2.5 V
3.1 V
30 3.7 V
4.0 V
20
10 4.5 V
0
0.1 1 10 100
ID - Drain Current - A
4
FORWARD TRANSFER CHARACTERISTICS
100
10
125°C TA = -25°C
1
25°C
75°C
0.1
0.01
0
0.5 1 1.5 2 2.5
VGS - Gate to Source Voltage - V
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -25°C
10 25°C
75°C
1
125°C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 2.0 A
30
20
10
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
Jul,18,2014
www.samhop.com.tw



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STF8810 Dual N-Channel Enhancement Mode Field Effect Transistor STF8810
SamHop Microelectronics
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