STF8234 Datasheet PDF - SamHop Microelectronics

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STF8234
SamHop Microelectronics

Part Number STF8234
Description N-Channel Enhancement Mode Field Effect Transistor
Page 6 Pages


STF8234 datasheet pdf
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STF8234
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
5.2 @ VGS=4.5V
5.3 @ VGS=4.0V
14A 5.4 @ VGS=3.7V
5.9 @ VGS=3.1V
6.8 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1
G
S
S
D
D
D
TDFN 2X3
(Bottom view)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
20
±12
14
11.2
80
1.8
1.1
-55 to 150
70
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,09,2012
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STF8234
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=18V , VGS=0V
VGS= ±12V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=7A
VGS=4.0V , ID=7A
VGS=3.7V , ID=7A
VGS=3.1V , ID=7A
VGS=2.5V , ID=7A
VDS=5V , ID=7A
VDS=10V,VGS=0V
f=1.0MHz
VDD=16V
ID=7A
VGS=4.5V
RGEN= 6 ohm
VDS=16V,ID=14A,
VGS=4.5V
0.5
3.0
3.1
3.3
3.5
4.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=14A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
Typ
0.85
3.9
4.0
4.1
4.4
5.0
56
2460
510
454
60
168
133
71
29
4.2
13.5
0.82
Max Units
V
1 uA
±10 uA
1.5 V
5.2 m ohm
5.3 m ohm
5.4 m ohm
5.9 m ohm
6.8 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Nov,09,2012
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STF8234
Ver 1.0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100 RDS(ON) Limit
10
100us
1
0.1 VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1 1
1ms
10ms
100ms
1s
DC
10
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2 Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on FR-4 board of
100 1 inch2 , 2oz
10
1
Single Pulse
0.1
0.001
0.01
0.1 1 10
PW - Pulse Width - s
3
100 1000
Nov,09,2012
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STF8234
Ver 1.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
VGS = 4.5 V
4.0 V
50 3.7 V
3.1 V
40
2.5 V
30
20
10
0
0 0.2 0.4 0.6 0.8 1
VDS - Drain to Source Voltage - V
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
ID = 1.0mA
0.9
0.8
0.7
0.6
0.5
-50
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8 VGS = 2.5 V
3.1 V
3.7 V
6 4.0 V
4
4.5 V
2
0
0.1 1 10 100
ID - Drain Current - A
4
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = -25°C
1
125°C
25°C
0.1 75°C
0.01
0
0.5 1 1.5 2 2.5
VGS - Gate to Source Voltage - V
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -25°C
10 25°C
75°C
1 125°C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 7 A
30
20
10
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
Nov,09,2012
www.samhop.com.tw



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