STF2459A Datasheet PDF - SamHop Microelectronics

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STF2459A
SamHop Microelectronics

Part Number STF2459A
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 7 Pages


STF2459A datasheet pdf
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STF2459AGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
6.2 @ VGS=10V
7.5 @ VGS=4.5V
8.0 @ VGS=4.0V
24V 12A
8.6 @ VGS=3.7V
10.3 @ VGS=3.1V
16.3 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
S1
PIN 1
D1/D2
(Bottom view)
G2
S2
S2
TDFN 2X5
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a c
-Pulsed c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
24
±16
12
9.6
58
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Feb,18,2014
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STF2459A
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=20V , VGS=0V
VGS= ±16V , VDS=0V
24
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1.0mA
VGS=10V , ID=6A
VGS=4.5V , ID=6A
VGS=4.0V , ID=6A
VGS=3.7V , ID=6A
VGS=3.1V , ID=6A
VGS=2.5V , ID=6A
VDS=5V , ID=6A
VDS=10V,VGS=0V
f=1.0MHz
VDD=20V
ID=6A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=12A,VGS=10V
VDS=20V,ID=12A,VGS=4.5V
VDS=20V,ID=12A,
VGS=10V
0.5
4.1
4.7
5.0
5.3
6.1
9.4
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=12A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ
1.0
5.1
6.0
6.4
6.8
8.0
12.5
27
1010
322
283
35
75
37
80
35
18
2
11
0.83
Max Units
V
1 uA
±10 uA
1.5 V
6.2 m ohm
7.5 m ohm
8.0 m ohm
8.6 m ohm
10.3 m ohm
16.3 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Feb,18,2014
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STF2459A
Ver 1.0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(ON) Limit
10
1
10us
100us
1ms
10ms
0.1 VGS=10V
Single Pulse
TA=25 C
0.01
0.1 1
1s
DC
10
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2 Mounted on FR-4 board of
1 inch2 , 1oz
1.5
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Mounted on FR-4 board of
1 inch2 , 1oz
10
1
Single Pulse
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - s
3
100 1000
Feb,18,2014
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STF2459A
Ver 1.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
VGS = 10 V
25
4.5 V
20 4.0 V
15 3.7 V
10 3.1 V
2.5 V
5
0
0 0.2 0.4 0.6 0.8 1
VDS - Drain to Source Voltage - V
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.1 ID = 1.0mA
1.0
0.9
0.8
0.7
-50
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
24
VGS = 2.5 V
18 3.1 V
4.5 V 4.0 V 3.7 V
12
6
10 V
0
0.1 1 10
ID - Drain Current - A
100
4
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = -25°C
125°C
1 25°C
75°C
0.1
0.01
0
0.5 1 1.5 2 2.5
VGS - Gate to Source Voltage - V
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10 TA = -25°C
25°C
1 75°C
125°C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 6 A
30
20
10
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
Feb,18,2014
www.samhop.com.tw



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STF2459A Dual N-Channel Enhancement Mode Field Effect Transistor STF2459A
SamHop Microelectronics
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