STD70NH02L Datasheet PDF - ST Microelectronics


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STD70NH02L
ST Microelectronics

Part Number STD70NH02L
Description N-CHANNEL Power MOSFET
Page 16 Pages

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STD70NH02L
STD70NH02L-1
N-channel 24V - 0.0062- 60A - DPAK/IPAK
STripFET™ II Power MOSFET
General features
Type
STD70NH02L-1
STD70NH02L
VDSS
24V
24V
RDS(on)
<0.008
<0.008
1. Value limited by wire bonding
RDS(ON) * Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
ID
60A(1)
60A(1)
Description
The device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
Switching application
3
1
DPAK
3
2
1
IPAK
Internal schematic diagram
Order codes
Part number
STD70NH02LT4
STD70NH02L-1
Marking
D70NH02L
D70NH02L
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
July 2006
Rev 5
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Contents
Contents
STD70NH02L - STD70NH02L-1
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STD70NH02L - STD70NH02L-1
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Vspike (1) Drain-source voltage rating
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20k)
VGS
ID (2)
Gate-source voltage
Drain current (continuous) at TC = 25°C
ID
IDM (3)
Drain current (continuous) at
TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
EAS (4) Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Guaranted when external Rg= 4.7and Tf<Tfmax
2. Value limited by wire bonding
3. Pulse width limited by safe operating area
4. Starting Tj =25°C, Id = 30A, Vdd = 15V
Value
30
24
24
± 20
60
50
240
70
0.47
360
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-to ambient max
TJ Maximum lead temperature for soldering purpose
2.14 °C/W
100 °C/W
275 °C
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Electrical characteristics
2 Electrical characteristics
STD70NH02L - STD70NH02L-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 25mA, VGS =0
VDS = 20V
VDS = 20V, TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 5V, ID = 15A
24 V
1 µA
10 µA
±100 nA
1 1.8
V
0.0062 0.008
0.008 0.014
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Qoss(2)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
RG Gate input resistance
VDS = 10V, ID = 18A
VDS = 25V, f = 1MHz,
VGS = 0
VDD = 10V, ID = 40A
RG = 4.7VGS = 4.5V
(see Figure 13)
VDD = 5V, ID = 60A,
VGS = 10V, RG = 4.7
(see Figure 14)
VDS =10V, VGS =0V
f=1MHz Gate DC
Bias =0 Test Signal
Level =20mV
Open Drain
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Qoss.= Coss * Vin, Coss = Cgd + Cgd. See Chapter 4: Appendix A
Min. Typ. Max. Unit
27 S
2050
545
70
12
200
18
25
17
7.7
3.5
14
22
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1
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