STD30NF03LT Datasheet PDF - STMicroelectronics

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STD30NF03LT
STMicroelectronics

Part Number STD30NF03LT
Description N-channel 30V - 0.017ohm - 30A - DPAK STripFET II Power MOSFET
Page 13 Pages


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STD30NF03LT
N-channel 30V - 0.017- 30A - DPAK
STripFET™ II Power MOSFET
General features
Type
STD30NF03LT
VDSS
30V
Low threshold drive
RDS(on)
< 0.025
ID
30A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
Switching application
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD30NF03LTT4
Marking
D30NF03LT
Package
DPAK
Packaging
Tape & reel
February 2007
Rev 3
1/13
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Contents
Contents
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1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STD30NF03LT
1 Electrical ratings
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Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 k)
VGS Gate- source voltage
ID(1) Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot Total dissipation at TC = 25°C
Derating Factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4)
Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD 30A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
4. Starting Tj = 25 °C, ID = 15A VDD = 25V
Value
30
30
± 20
30
21
120
50
0.33
4
450
-55 to 175
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ Maximum lead temperature for soldering purpose
3.0
100
275
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 15 V)
Max value
40
2.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C/W
°C/W
°C
Unit
A
J
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Electrical characteristics
2 Electrical characteristics
wwwS.TDDat3a0ShNeFe0t43UL.cTom
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
30
V
VDS = Max rating
VDS = Max rating,
TC = 125°C
1 µA
10 µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
1
1.7 2.5
V
VGS = 6V, ID = 15A
VGS = 105V, ID = 15A
0.025 0.035
0.017 0.025
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 15A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 15A
RG = 4.7VGS = 6V
(see Figure 12)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 15V, ID = 30A,
VGS = 6V, RG = 4.7
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
30 S
750 pF
280 pF
70 pF
15 ns
30 ns
20 ns
10 ns
13 18 nC
5.5 nC
5 nC
4/13



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