STC403D Datasheet PDF - AUK

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STC403D
AUK

Part Number STC403D
Description NPN Silicon Transistor
Page 3 Pages


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Semiconductor
Features
Power Transistor General Purpose application
Low saturation voltage
: VCE(SAT)=0.4V Max.
High Voltage : VCEO =60V Min.
Ordering Information
Type NO.
Marking
STC403D
STC403
Outline Dimensions
Package Code
D- PAK
STC403D
NPN Silicon Transistor
unit : mm
KST--D003-000
PIN Connections
1. Base
2. Collector
3. Emitter
1



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Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Tc=25 )
Junction temperature
Storage temperature
Symbol
VC B O
VC E O
VE B O
IC
PC
Tj
Tstg
STC403D
Ratings
80
60
5
3
15
150
- 55~150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE * VCE=5V, IC=0.5A
Base-Emitter on voltage
VBE(ON) VCE=5V, IC=0.5A
Collector-Emitter saturation voltage VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT VCB=5V, IC=0.5A
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Switching
Time
Turn-on Time
Storage Time
Fall Time
Ton
Tstg
Tf
* HFE rank : 200~400 Only
Min. Typ. Max. Unit
60 -
-V
- - 50 µA
- - 50 µA
200 - 400 -
- 0.7
1
V
- 0.4
1
V
- 30
- MH
- 35 - pF
- 0.65
-
- 1.3
-
- 0.65
-
KST--D003-000
2



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Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 VCE - IC
STC403D
Fig. 3 hFE-IC
Fig. 5 IC - VCE
Fig. 5 Safe operating Area
KST--D003-000
3



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