STB31L01 Datasheet PDF - SamHop Microelectronics

www.Datasheet-PDF.com

STB31L01
SamHop Microelectronics

Part Number STB31L01
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 7 Pages


STB31L01 datasheet pdf
View PDF for PC
STB31L01 pdf
View PDF for Mobile


No Preview Available !

STB31L01Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
100V 26A 49 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-263 Package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
26
21.8
76
36
75
52.5
-55 to 175
2
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,20,2012
www.samhop.com.tw



No Preview Available !

STB31L01
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=13A
VDS=10V , ID=13A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=13A,VGS=10V
VDS=50V,ID=13A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD=50V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
2.0 3
V
49 60 m ohm
22 S
1460
88
75
pF
pF
pF
25 ns
23 ns
66 ns
14 ns
26 nC
2.6 nC
9.3 nC
0.79 1.3 V
Sep,20,2012
2 www.samhop.com.tw



No Preview Available !

STB31L01
40
V GS =10V
32 V GS =6V
24 V GS =5V
16
8
V GS =4V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
80
60 V GS =10V
40
20
1
1 8 16 24 32 40
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
25
20
Tj = 125 C
15
-55 C
10
25 C
5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8 V G S =10V
ID=13A
1.6
1.4
1.2
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,20,2012
3 www.samhop.com.tw



No Preview Available !

STB31L01
180
ID=13A
150
120
125 C
90
75 C
60
25 C
30
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
1200
Ciss
900
600
300 Coss
Crss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
10
125 C
25 C
75 C
Ver 1.1
1
0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8
ID=13A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
500
100
TD(off )
100
Tr
TD(on)
Tf
10
VDS=50V,ID=1A
VGS=10V
1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
1
0.3
0.1
VGS=10V
Single Pulse
TA=25 C
1 10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Sep,20,2012
4 www.samhop.com.tw



STB31L01 datasheet pdf
Download PDF
STB31L01 pdf
View PDF for Mobile


Related : Start with STB31L0 Part Numbers by
STB31L01 N-Channel Logic Level Enhancement Mode Field Effect Transistor STB31L01
SamHop Microelectronics
STB31L01 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact