STA4470 Datasheet PDF - SamHop Microelectronics

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STA4470
SamHop Microelectronics

Part Number STA4470
Description N-Channel Enhancement Mode Field Effect Transistor
Page 6 Pages


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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STA4470
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
40V 11A
12 @ VGS=10V
16 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
PDIP-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
40
±20
11
8.9
55
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Aug,18,2008
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STA4470
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
b
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=11A
VGS=4.5V , ID=9.6A
VDS=5V , ID=11A
40
1.0
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=3.3 ohm
VDS=20V,ID=11A,VGS=10V
VDS=20V,ID=11A,VGS=4.5V
VDS=20V,ID=11A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=1.7A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ
2.0
10
12
26.5
1720
230
145
22
23
65
30
25
12
2.5
5.5
0.74
Max Units
1
±100
V
uA
nA
3V
12 m ohm
16 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.7 A
1.2 V
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STA4470
Ver 1.0
60
VGS=10V
48 VGS=4.5V
VGS=3.5V
36
VGS=3V
24
12 VGS=2.5V
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
15
12
9 25 C
6
Tj=125 C
-55 C
3
0
0 0.6 1.2 1.8 2.4 3.0 3.6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
12
10
V GS =4.5V
8
6
V GS =10V
4
2
0
1 12 24 36 48 60
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.2
V G S =10V
2.0 ID=11A
1.8
1.6
V G S =4.5V
1.4 ID=9.6A
1.2
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.4 1.4
1.2
V DS =V G S
ID=250uA
1.3
1.0 1.2
ID=250uA
0.8
1.1
0.6
1.0
0.4
0.2 0.9
0.0
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
0.8
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,18,2008
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STA4470
30
ID=11A
25
20 125 C
15
75 C
10
25 C
5
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
Ciss
1200
800
Coss
400
Crss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
125 C
25 C
75 C
Ver 1.0
1.0
0.2
0.4
0.6 0.8 1.0
1.2
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 V DS =20V
ID=11A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
600
100
60
10
T D(off)
Tr
Tf
T D(on)
1 V DS =20V ,ID=1A
V G S =10V
1 6 10 60 100 300 600
Rg, Gate Resistance()
Figure 11. switching characteristics
100
10 R DS(ON) Limit
1
1ms
100ms
10s
DC
0.1
0.05
0.1
V GS =10V
S ingle P ulse
T A=25 C
1
10 40 70
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Aug,18,2008
4 www.samhop.com.tw



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