ST9402 Datasheet PDF - Stanson Technology


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ST9402
Stanson Technology

Part Number ST9402
Description N Channel Enhancement Mode MOSFET
Page 6 Pages

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ST9402
N Channel Enhancement Mode MOSFET
3.6A
DESCRIPTION
ST9402 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density
process is especially tailored to minimize on-state resistance.These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
GS
12
FEATURE
z 20V/3.6A, RDS(ON) = 76mΩ
@VGS = 4.5V
z 20V/3.1A, RDS(ON) = 90 mΩ
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S02YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST9402SRG
SOT-23
Process Code : A ~ Z ; a ~ z
ST9402SRG S : SOT23 ; R : Tape Reel ; G : Pb – Free
S02YA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
www.DataSheet.in
ST9402 2005. V1



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ST9402
N Channel Enhancement Mode MOSFET
3.6A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150)
TA=25
TA=70
Pulsed Drain Current
VDSS
VGSS
ID
IDM
20
±12
3.2
2.6
10
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
IS
PD
TJ
1.6
1.25
0.8
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
100
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
www.DataSheet.in
ST9402 2005. V1



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ST9402
N Channel Enhancement Mode MOSFET
3.6A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=55
VDS5V,VGS=4.5V
VDS5V,VGS=2.5V
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
VDS=5V,ID=3.6V
IS=1.6A,VGS=0V
VDS=10V
VGS=4.5V
ID3.6A
VDS=10V
VGS=0V
F=1MHz
VDD=10V
RL=5.5Ω
ID=3.6A
VGEN=4.5V
RG=6Ω
20 V
0.4 1.2 V
±100 nA
1
10 uA
6
4
A
0.075 0.085
0.080 0.090
Ω
10 S
0.85 1.2 V
5.4 10
0.65
1.4
340
115
33
12 25
36 60
34 60
10 25
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
www.DataSheet.in
ST9402 2005. V1



No Preview Available !

ST9402
N Channel Enhancement Mode MOSFET
3.6A
TYPICAL CHARACTERICTICS (25Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
www.DataSheet.in
ST9402 2005. V1




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