SSM9928O Datasheet PDF - Silicon Standard

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SSM9928O
Silicon Standard

Part Number SSM9928O
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 6 Pages


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SSM9928O
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low on-resistance
Capable of 2.5V gate drive
Optimal DC/DC battery application
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
and cost-effectiveness.
D1 D2
G1 G2
S1 S2
BVDSS
RDS(ON)
ID
20V
23mΩ
5A
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THTERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
125
Unit
/W
03/11/2007 Rev.1.00
www.SiliconStandard.com
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SSM9928O
ELECTRICAL CHARACTERISTICS @Tj=25o C(unless otherwise specified)
Symbol
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=5A
VGS=2.5V, ID=2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V
VGS=±12V
ID=5A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=4.5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
Min. Typ. Max. Units
20 - - V
- 0.02 - V/
- - 23 mΩ
- - 29 mΩ
0.5 - - V
- 21 -
S
- - 1 uA
- - 25 uA
- - ±10 uA
- 15.9 - nC
- 1.5 - nC
- 7.4 - nC
- 6.2 - ns
- 9 - ns
- 30 - ns
- 11
-
- 530 -
ns
pF
- 245 - pF
- 125 - pF
SOURCE-DRAIN DIODE
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V,VS=1.2V
Tj=25,IS=5A,VGS=0V
Min. Typ. Max. Units
- - 0.83 A
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad.
03/11/2007 Rev.1.00
www.SiliconStandard.com
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SSM9928O
30
4.5V
3.5V
3.0V
2.5V
20
V GS =2.0V
10
T C =25 o C
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
4.5V
3.5V
3.0V
2.5V
20
V GS =2.0V
10
T C =150 o C
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
95 1.9
I D = 5A
T C =25 o C
I D = 5A
V GS = 4.5V
1.5
65
1.1
35
0.7
5
123456
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
0.3
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
03/11/2007 Rev.1.00
www.SiliconStandard.com
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SSM9928O
A
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
1.2
0.9
0.6
0.3
0
0 50 100 150
T c , Case Temperature ( o C)
Fig 6. Typical Power Dissipation
100
10
1
0.1
T C =25 o C
Single Pulse
0.01
0.1
1
V DS (V)
10
100us
1ms
10ms
100ms
1s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 8. Effective Transient Thermal Impedance
03/11/2007 Rev.1.00
www.SiliconStandard.com
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