SSM7811GM Datasheet PDF - Silicon Standard

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SSM7811GM
Silicon Standard

Part Number SSM7811GM
Description N-channel Enhancement-mode Power MOSFET
Page 7 Pages


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SSM7811GM
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
25V
12m
11.8A
Pb-free; RoHS-compliant SO-8
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM7811GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM7811GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
Value
25
±12
11.8
9.4
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
9/16/2006 Rev.3.01
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SSM7811GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance2
Test Conditions
VGS=0V, ID=250uA
Reference to 25°C, ID=1mA
VGS=4.5V, ID=11.8A
Min. Typ. Max. Units
25 -
-V
- 0.1 - V/°C
- 10 12 m
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS=VGS, ID=250uA
0.5 - 1.2 V
VDS=15V, ID=11.8A
- 30 - S
VDS=25V, VGS=0V
- - 1 uA
VDS=20V ,VGS=0V, Tj = 70°C
-
- 25 uA
VGS12V
- - ±100 nA
ID=11.8A
- 32 - nC
VDS=20V
- 2.6 - nC
VGS=5V
- 15.5 - nC
VDS=15V
- 12 - ns
ID=1.5A
- 28 -
ns
RG=3.3, VGS=5V
- 41 - ns
RD=10
- 40 - ns
VGS=0V
- 800 - pF
VDS=25V
- 460 - pF
f=1.0MHz
- 215 - pF
Source-Drain Diode
Symbol
VSD
ISD
Parameter
Test Conditions
Forward voltage 2
IS=2.3A, VGS=0V
Continuous Source Current ( Body Diode ) VD=VG=0V, VS=1.2V
Min. Typ. Max. Units
- - 1.2 V
- - 2.08 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/16/2006 Rev.3.01
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SSM7811GM
40
T C =25 o C
30
4.5V
3.5V
3.0V
2.5V
20
10 V GS =2.0V
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
T C =150 o C
20
10
4.5V
3.5V
3.0V
2.5V
V GS =2.0V
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
18
I D =11.8A
T C =25 o C
16
14
12
10
8
23456
V GS (V)
Fig 3. On-Resistance vs. Gate Voltage
1.80
I D =11.8A
1.60 V GS =4.5V
1.40
1.20
1.00
0.80
0.60
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
9/16/2006 Rev.3.01
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SSM7811GM
15
12
9
6
3
0
25 50 75 100 125 150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
3
2.5
2
1.5
1
0.5
0
0 30 60 90 120 150
T c , Case Temperature ( o C)
Fig 6. Typical Power Dissipation
100
10
1
0.1
0.01
0.1
T C =25 o C
Single Pulse
1
V DS (V)
10
1ms
10ms
100ms
1s
10s
DC
100
1
Duty Factor = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
9/16/2006 Rev.3.01
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