SSM3J305T Datasheet PDF - Toshiba Semiconductor

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SSM3J305T
Toshiba Semiconductor

Part Number SSM3J305T
Description Field-Effect Transistor Silicon P-Channel MOS Type
Page 6 Pages


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SSM3J305T
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J305T
High-Speed Switching Applications
4 V drive
Low ON-resistance:
Ron = 477 m(max) (@VGS = 4 V)
Ron = 237 m(max) (@VGS = 10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
30 V
Gate–source voltage
VGSS
± 20 V
Drain current
DC
Pulse
ID
IDP
1.7 A
3.4
Drain power dissipation
PD (Note 1) 700 mW
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
55 to 150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateSource Charge
GateDrain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
Yfs
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
ID = −1 mA, VGS = 0
ID = −1 mA, VGS = + 20 V
VDS = −30 V, VGS = 0
VGS = ±16 V, VDS = 0
VDS = −5 V, ID = −1 mA
VDS = −5 V, ID =− 0.65 A
ID = −0.65 A, VGS = −10 V
ID = −0.4 A, VGS = −4 V
(Note 2)
(Note 2)
(Note 2)
VDS = −15 V, VGS = 0, f = 1 MHz
VDS = 15 V, IDS= 1.7 A
VGS = 4 V
VDD = −15 V, ID = −0.65 A,
VGS = 0 to 4 V, RG = 10
ID = 1.7 A, VGS = 0 V
(Note 3)
Min
30
15
1.2
0.8
Typ.
1.5
177
357
137
39
20
1.3
0.7
0.6
15
14
0.85
Max
1
±1
2.6
237
477
1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1 2007-11-01



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www.DaStawShietect4hUi.ncogm Time Test Circuit
(a) Test circuit
0 IN
4 V
10 μs
VDD = −15 V
RG = 10 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
RL
VDD
(b) VIN
0V
(c) VOUT
4 V
VDS (ON)
VDD
Marking
3
Equivalent Circuit (top view)
3
JJA
SSM3J305T
10%
90%
90%
10%
tr
tf
ton toff
12
12
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2 2007-11-01



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–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
0
ID – VDS
–10 V
–6 V
–4 V
–3.6 V
VGS = –3.3 V
Common Source
Ta = 25°C
–0.2
–0.4
–0.6
–0.8
–1
Drain–source voltage VDS (V)
SSM3J305T
ID – VGS
–10
Common Source
VDS = −5 V
–1
–0.1
–0.01
–0.001
Ta = 100 °C
25 °C
25 °C
–0.0001
0
–0.5 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0
Gate–source voltage VGS (V)
1000
900
800
700
600
500
400
300
200
100
0
0
RDS (ON) – VGS
ID = −0.65 A
Common Source
25 °C
Ta =100 °C
25 °C
–2 –4 –6 –8
Gate–source voltage VGS (V)
–10
1000
RDS (ON) – Ta
Common Source
800
600
ID = −0.4 A / VGS = –4.0 V
400
200
0
50
–0.65 A / –10 V
0 50 100 150
Ambient temperature Ta (°C)
1000
900
800
700
600
500
400
RDS (ON) – ID
Common Source
Ta = 25°C
VGS = – 4.0V
300
200
100
0
0
– 10 V
–0.5 –1.0 –1.5
–2.0 –2.5
Drain current ID (A)
–3.0
Vth – Ta
–2.0
–1.5
–1.0
–0.5
Common source
VDS = −5 V
0 ID = −1 mA
50 0
50
100
Ambient temperature Ta (°C)
150
3 2007-11-01



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|Yfs| – ID
10
Common Source
VDS = −5 V
3 Ta = 25°C
1
0.3
0.1
–0.01
–0.1
–1
Drain current ID (A)
–10
1000
C – VDS
500
300
Ciss
100
50
30
10
–0.1
Coss
Crss
–1 –10
Drain–source voltage VDS (V)
–100
Dynamic Input Characteristic
10
Common Source
ID = −1.7A
8 Ta = 25°C
6
VDD=15V
4 VDD=24V
2
0
0 1 23
Total Gate Charge Qg (nC)
SSM3J305T
IDR – VDS
10
Common Source D
VGS = 0 V
1 Ta = 25°C
G
IDR
S
0.1
0.01
Ta = 100 °C
0.001
25 °C
0.0001
0
25 °C
0.2 0.4 0.6 0.8 1.0
Drain–source voltage VDS (V)
1.2
600
toff
100
tf
t – ID
10 ton
tr
1
–0.01
–0.1
–1
Drain current ID (A)
–10
4 2007-11-01



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SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T
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