SSM3J16CT Datasheet PDF - Toshiba Semiconductor


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SSM3J16CT
Toshiba Semiconductor

Part Number SSM3J16CT
Description Field-Effect Transistor Silicon P-Channel MOS Type
Page 5 Pages

SSM3J16CT datasheet pdf
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SSM3J16CT
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16CT
High Speed Switching Applications
Analog Switch Applications
Unit: mm
Small package
Low on-resistance
: Ron = 8 Ω (max) (@VGS = −4 V)
: Ron = 12 Ω (max) (@VGS = −2.5 V)
: Ron = 45 Ω (max) (@VGS = −1.5 V)
0. 6 ±0 . 05
0. 5 ±0 . 03
Absolute Maximum Ratings (Ta = 25°C)
12
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS 20 V
0 .3 5 ±0 .02
0 .1 5 ± 0 .0 3
0 .0 5 ± 0 .0 3
Gate-Source voltage
VGSS ±10 V
Drain current
DC
Pulse
ID
100
mA
IDP 200
Drain power dissipation (Ta = 25°C)
Channel temperature
PD (Note 1)
Tch
100
150
mW
°C
CST3
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
Weight :0.75mg
2-1J1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(10 mm × 10 mm × 1.0 t, Cu Pad: 100 mm2)
Marking (Top View)
Pin Condition (Top View)
Equivalent Circuit
Polarity mark
Polarity mark (on the top)
3
1
S2 3
2
Handling Precaution
1. Gate
2. Source
3. Drain
*Electrodes: On the bottom
12
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
1 2007-11-01



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www.DaEtalSehceettr4iUc.caolmCharacteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
Yfs
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = ±10 V, VDS = 0
ID = −0.1 mA, VGS = 0
VDS = −20 V, VGS = 0
VDS = −3 V, ID = −0.1 mA
VDS = −3 V, ID = −10 mA
ID = −10 mA, VGS = −4 V
ID = −10 mA, VGS = −2.5 V
ID = −1 mA, VGS = −1.5 V
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −3 V, ID = − 10 mA,
VGS = 0 ~ 2.5 V
SSM3J16CT
MIN. TYP. MAX. UNIT
⎯ ⎯ ±1 μA
20 ⎯ ⎯ V
⎯ ⎯ −1 μA
0.6 ⎯ −1.1 V
25 ⎯ ⎯ mS
6
8
8 12 Ω
18 45
11 pF
3.7 pF
10 pF
130
190
ns
Switching Time Test Circuit
(a) Test circuit
0 IN
OUT
2.5V
10 μs
VDD = −3 V
Duty <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
RL
VDD
(b) VIN
0V
(c) VOUT
2.5 V
VDS (ON)
VDD
10%
90%
90%
10%
tr
tf
ton toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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-250
-200
-150
-100
-50
0
0
ID – VDS
Common Source
-10 -4 Ta = 25°C
-3
-2.7
-2.5
-2.3
-2.1
-1.9
-1.7
VGS = -1.5 V
-0.5 -1 -1.5
Drain - Source voltage VDS (V)
-2
SSM3J16CT
-1000
-100
Common Source
VDS = -3 V
ID – VGS
Ta = 100°C
-10
25°C
-1
25°C
-0.1
-0.01
0
-1 -2 -3
Gate - Source voltage VGS (V)
-4
RDS (ON) – ID
25
VGS = -1.5 V
20
15
10 -2.5 V
5
-4 V
0
-1
-10
-100
-1000
Drain current ID (mA)
20
1.8
1.6
1.4
1.2
10
8
6
.4
2
00
RDS (ON) – VGS
Common Source
ID = -1 mA
Ta=100
25
-25
-2 -4
-6 -8
Gate - Source voltage VGS (V)
-10
RDS (ON) – Ta
40
Common Source
35
30
25
20 VGS =−1.5 VID=-1mA
15
-2.5 V-10mA
10
5 -4V-10mA
0
25 0
25 50
75 100 125 150
Ambient temperature Ta (°C)
-2
Common Source
-1.8 ID = -0.1 mA
-1.6 VDS = -3 V
Vth – Ta
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
25 0
25 50
75 100 125
Ambient temperature Ta (°C)
150
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1000
500
300
100
50
30
10
5
3
1
-1
Yfs– ID
Common Source
VDS =−3 V
Ta = 25°C
-10 -100
Drain current ID (mA)
-1000
SSM3J16CT
IDR – VDS
-250
Common Source
VGS = 0 V
-200
Ta = 25°C
D
-150 G
IDR
S
-100
-50
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drain - Source VDS (V)
c – VDS
200
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
10 Ciss
Coss
Crss
1
-0.1 -1 -10
Drain - Source voltage VDS (V)
-100
10000
5000
3000
1000
500
300
100
50
30
toff
tf
ton
tr
t – ID
Common Source
VDD = -3 V
VGS = 0~-2.5 V
Ta = 25°C
10
-0.1 -1 -10 -100
Drain current ID (mA)
PD – Ta
250
Mounted on FR4 board
(10 mm × 10 mm × 1.0 t, Cu
Pad: 100 mm2 )
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2007-11-01




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