SSM3J15F Datasheet PDF - Toshiba Semiconductor


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SSM3J15F
Toshiba Semiconductor

Part Number SSM3J15F
Description Field-Effect Transistor Silicon P-Channel MOS Type
Page 5 Pages

SSM3J15F datasheet pdf
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15F
High Speed Switching Applications
Analog Switch Applications
SSM3J15F
Small package
Low ON resistance : Ron = 12 (max) (@VGS = −4 V)
: Ron = 32 (max) (@VGS = −2.5 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
IDP
PD
Tch
Tstg
Rating
30
±20
100
200
200
150
55~150
Unit
V
V
mA
mW
°C
°C
Unit: mm
+0. 5
2.5-0.3
+0.25
1. 5-0. 15
1
23
S-MINI
1.Gate
2.Source
3.Drain
Marking
3
Equivalent Circuit (top view)
3
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012g(typ.)
DQ
12
12
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1 2004-5-06



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www.DataSheeEt4leUc.ctormical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
Yfs
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = ±16 V, VDS = 0
ID = −0.1 mA, VGS = 0
VDS = −30 V, VGS = 0
VDS = −3 V, ID = −0.1 mA
VDS = −3 V, ID = −10 mA
ID = −10 mA, VGS = −4 V
ID = −1 mA, VGS = −2.5 V
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −5 V, ID = −10 mA,
VGS = 0~5 V
SSM3J15F
MIN.
30
1.1
20
TYP.
8
14
9.1
3.5
8.6
65
175
MAX.
±1
1
1.7
12
32
UNIT
µA
V
µA
V
mS
pF
pF
pF
ns
Switching Time Test Circuit
(a) Test circuit
0
IN
OUT
5V
10 µs
VDD = −5 V
Duty <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 )
Common Source
Ta = 25°C
RL
VDD
(b) VIN
0V
(c) VOUT
5 V
VDS (ON)
VDD
10%
90%
90%
10%
tr
tf
ton toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 µA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage
than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this
product.
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-250
-200
ID - VDS
Common Source
Ta=25°C
-10 -7
-5
-4
-150
-100
-50
0
0
-3.3
-3.0
-2.7
-2.5
VGS=-2.3V
-0.5 -1 -1.5
Drain-Source Voltage VDS(V)
-2
SSM3J15F
-1000
-100
-10
-1
ID - VGS
Common Source
VDS=-3V
Ta=100°C
25°C
-25°C
-0.1
-0.01
0
-1 -2 -3 -4
Gate-Source Voltage VGS(V)
-5
40
30
20
10
0
-1
RDS(ON) - ID
Common Source
Ta=25°C
VGS=-2.5V
-4V
-10 -100
Drain Current ID(mA)
-1000
20
18
16
14
12
10
8
6
4
2
0
0
RDS(ON) - VGS
Source Common
ID= -1mA
Ta=100°C
25°
-25°C
-2 -4 -6 -8
Gate-Source Voltage VGS (V)
-10
RDS(ON) - Ta
30
Common Source
20 VGS=-2.5V,ID=-1mA
10
-4V,-10mA
0
-25
0 25 50 75 100 125 150
Ambient temperature Ta(°C)
Vth - Ta
-2
-1.8 Common Source
ID=-0.1mA
-1.6 VDS=-3V
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25 0 25 50 75 100 125 150
Ambient temperature Ta(°C)
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1000
100
10
1
-1
100
10
1
-0.1
|Yfs| - ID
Common Source
VDS= -3V
Ta=25°C
-10 -100
Drain current ID (mA)
-1000
C - VDS
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ciss
Coss
Crss
-1 -10
Drain-Source voltage VDS (V)
-100
SSM3J15F
-250
-200
IDR - VDS
Common Source
VGS=0V
Ta=25°C
-150
-100
-50
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drain-Source voltage VDS (V)
10000
1000
toff
tf
t - ID
Common Source
VDD= -5V
VGS=0~-5V
Ta=25°C
100 ton
tr
10
-0.1
-1 -10
Drain Current ID (mA)
-100
PD - Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
4 2004-5-06




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